Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
The possibility to create uncooled photodetector (PD) in the region close to l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PD based on Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2014 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118429 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ. |
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Lepikh, Ya.I. Ivanchenko, I.A. Budiyanskaya, L.M. 2017-05-30T10:34:57Z 2017-05-30T10:34:57Z 2014 Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 07.57.Kp, 73.40.-c https://nasplib.isofts.kiev.ua/handle/123456789/118429 The possibility to create uncooled photodetector (PD) in the region close to l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PD based on Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-band CdSe layer is located on the illuminated surface and plays the role of the optical filter with respect to the lower layer of ternary compound. The PD spectral characteristics at room temperature have been researched, which confirms the photoactivity of both heterojunction layers. The mechanism of current flow in the PD structure based on the above heterojunction and the mechanism of the PD samples sensitivity at room temperature in the far infrared spectrum, the determining factor of which is the amount of wide-gap semiconductors where space charge-limited current appears, have been investigated. The uncooled PD detectability typical for polycrystalline structures 106 …107 сm*Hz¹/²/W has been discovered. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range |
| spellingShingle |
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range Lepikh, Ya.I. Ivanchenko, I.A. Budiyanskaya, L.M. |
| title_short |
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range |
| title_full |
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range |
| title_fullStr |
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range |
| title_full_unstemmed |
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range |
| title_sort |
uncooled р(pb₁₋xsnxse)-n(cdse) heterostructure-based photodetector for the far infrared spectral range |
| author |
Lepikh, Ya.I. Ivanchenko, I.A. Budiyanskaya, L.M. |
| author_facet |
Lepikh, Ya.I. Ivanchenko, I.A. Budiyanskaya, L.M. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The possibility to create uncooled photodetector (PD) in the region close to
l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually
and practically confirmed. Design and technology of uncooled thin-film PD based on
Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-band CdSe layer is located on
the illuminated surface and plays the role of the optical filter with respect to the lower
layer of ternary compound. The PD spectral characteristics at room temperature have
been researched, which confirms the photoactivity of both heterojunction layers. The
mechanism of current flow in the PD structure based on the above heterojunction and
the mechanism of the PD samples sensitivity at room temperature in the far infrared
spectrum, the determining factor of which is the amount of wide-gap semiconductors
where space charge-limited current appears, have been investigated. The uncooled PD
detectability typical for polycrystalline structures 106
…107 сm*Hz¹/²/W has been
discovered.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118429 |
| citation_txt |
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
AT lepikhyai uncooledrpb1xsnxsencdseheterostructurebasedphotodetectorforthefarinfraredspectralrange AT ivanchenkoia uncooledrpb1xsnxsencdseheterostructurebasedphotodetectorforthefarinfraredspectralrange AT budiyanskayalm uncooledrpb1xsnxsencdseheterostructurebasedphotodetectorforthefarinfraredspectralrange |
| first_indexed |
2025-12-07T17:19:22Z |
| last_indexed |
2025-12-07T17:19:22Z |
| _version_ |
1850870818458828800 |