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Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range

The possibility to create uncooled photodetector (PD) in the region close to
 l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually
 and practically confirmed. Design and technology of uncooled thin-film PD based on
 Pb Sn Se₁₋x p -n(CdSe) hetero...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2014
Main Authors: Lepikh, Ya.I., Ivanchenko, I.A., Budiyanskaya, L.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118429
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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