Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic
 susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration
 near metal-insulator junction has been studied. Significant differences have been
 observed in the change of...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118430 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers / P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 416-420. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic
susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration
near metal-insulator junction has been studied. Significant differences have been
observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz-Si.
The low-temperature (4.2…40 K) changes of magnetoresistance in magnetic fields up to
14 T, caused by irradiation, have been studied. It has been established that at
temperatures near 4.2 K, a significant contribution to the conductivity is made by light
charge carriers of low concentration but with high mobility. The level supplying these
charge carriers has the energy of e = 2.1 meV, and with application of magnetic field it
increases up to e = 2.5 meV in approx. 10 T field. It demonstrates the fact that the reason
of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field
decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is
due to holes, the activation energy whereof is e = 11.5 meV, which is practically
independent of the magnetic field.
|
|---|---|
| ISSN: | 1560-8034 |