Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers

The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic
 susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration
 near metal-insulator junction has been studied. Significant differences have been
 observed in the change of...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2014
Hauptverfasser: Litovchenko, P.G., Pavlovska, N.T., Pavlovskyy, Yu.V., Ugrin, Yu.O., Luka, G., Ostrovskyy, I.P.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118430
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Zitieren:Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers / P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 416-420. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Litovchenko, P.G.
Pavlovska, N.T.
Pavlovskyy, Yu.V.
Ugrin, Yu.O.
Luka, G.
Ostrovskyy, I.P.
author_facet Litovchenko, P.G.
Pavlovska, N.T.
Pavlovskyy, Yu.V.
Ugrin, Yu.O.
Luka, G.
Ostrovskyy, I.P.
citation_txt Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers / P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 416-420. — Бібліогр.: 12 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic
 susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration
 near metal-insulator junction has been studied. Significant differences have been
 observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz-Si.
 The low-temperature (4.2…40 K) changes of magnetoresistance in magnetic fields up to
 14 T, caused by irradiation, have been studied. It has been established that at
 temperatures near 4.2 K, a significant contribution to the conductivity is made by light
 charge carriers of low concentration but with high mobility. The level supplying these
 charge carriers has the energy of e = 2.1 meV, and with application of magnetic field it
 increases up to e = 2.5 meV in approx. 10 T field. It demonstrates the fact that the reason
 of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field
 decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is
 due to holes, the activation energy whereof is e = 11.5 meV, which is practically
 independent of the magnetic field.
first_indexed 2025-12-07T19:19:53Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T19:19:53Z
publishDate 2014
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Litovchenko, P.G.
Pavlovska, N.T.
Pavlovskyy, Yu.V.
Ugrin, Yu.O.
Luka, G.
Ostrovskyy, I.P.
2017-05-30T10:35:42Z
2017-05-30T10:35:42Z
2014
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers / P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 416-420. — Бібліогр.: 12 назв. — англ.
1560-8034
PACS 61.82.FK, 72.20.I, 72.20.MY
https://nasplib.isofts.kiev.ua/handle/123456789/118430
The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic
 susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration
 near metal-insulator junction has been studied. Significant differences have been
 observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz-Si.
 The low-temperature (4.2…40 K) changes of magnetoresistance in magnetic fields up to
 14 T, caused by irradiation, have been studied. It has been established that at
 temperatures near 4.2 K, a significant contribution to the conductivity is made by light
 charge carriers of low concentration but with high mobility. The level supplying these
 charge carriers has the energy of e = 2.1 meV, and with application of magnetic field it
 increases up to e = 2.5 meV in approx. 10 T field. It demonstrates the fact that the reason
 of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field
 decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is
 due to holes, the activation energy whereof is e = 11.5 meV, which is practically
 independent of the magnetic field.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
Article
published earlier
spellingShingle Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
Litovchenko, P.G.
Pavlovska, N.T.
Pavlovskyy, Yu.V.
Ugrin, Yu.O.
Luka, G.
Ostrovskyy, I.P.
title Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
title_full Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
title_fullStr Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
title_full_unstemmed Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
title_short Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
title_sort magnetic and magnetoresistive characteristics of neutron-irradiated si₀.₉₇ge₀.₀₃ whiskers
url https://nasplib.isofts.kiev.ua/handle/123456789/118430
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AT pavlovskant magneticandmagnetoresistivecharacteristicsofneutronirradiatedsi097ge003whiskers
AT pavlovskyyyuv magneticandmagnetoresistivecharacteristicsofneutronirradiatedsi097ge003whiskers
AT ugrinyuo magneticandmagnetoresistivecharacteristicsofneutronirradiatedsi097ge003whiskers
AT lukag magneticandmagnetoresistivecharacteristicsofneutronirradiatedsi097ge003whiskers
AT ostrovskyyip magneticandmagnetoresistivecharacteristicsofneutronirradiatedsi097ge003whiskers