Radiation-induced optical darkening and oxidation effects in As₂S₃ glass
The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average energy E = 1.25 MeV and accumulated dose Ф = 2.41 MGy is reported. The red s...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118483 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 308-312. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862607094994173952 |
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| author | Kavetskyy, T.S. |
| author_facet | Kavetskyy, T.S. |
| citation_txt | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 308-312. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average energy E = 1.25 MeV and accumulated dose Ф = 2.41 MGy is reported. The red shift (radiation-induced optical darkening effect) is detected within the period of 2-3 months after y-irradiation able to cause the well-known static radiation-induced optical effect. The detected decrease in the slope of curve in the fundamental optical absorption edge region after y-irradiation, resulting in the maximum difference of optical transmittance for the unirradiated and y- irradiated samples max at the level 33.5%, can be interpreted within the radiationinduced defect formation processes occurring in the structural network of glass. At the same time, as expected from literature, the observed decrease in the sample’s transparency at the level 33% upon radiation is plausibly caused by the accompanying radiation-induced oxidation processes that are the most probably related with appearance of As₂S₃ (arsenolite) crystals and S phases at the surface of y-irradiated sample, forming a white oxidized layer visible to the eye. The disadvantage of As₂S₃ glass to be selected as the best model object for X-ray diffraction study of y-radiation-structural changes, especially in respect to the first sharp diffraction peak, is considered.
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| first_indexed | 2025-11-28T13:37:03Z |
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| id | nasplib_isofts_kiev_ua-123456789-118483 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T13:37:03Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kavetskyy, T.S. 2017-05-30T14:04:20Z 2017-05-30T14:04:20Z 2014 Radiation-induced optical darkening and oxidation effects in As₂S₃ glass / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 308-312. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.43.Fs, 61.80.Ed, 78.40.Fy, 78.40.Pg https://nasplib.isofts.kiev.ua/handle/123456789/118483 The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average energy E = 1.25 MeV and accumulated dose Ф = 2.41 MGy is reported. The red shift (radiation-induced optical darkening effect) is detected within the period of 2-3 months after y-irradiation able to cause the well-known static radiation-induced optical effect. The detected decrease in the slope of curve in the fundamental optical absorption edge region after y-irradiation, resulting in the maximum difference of optical transmittance for the unirradiated and y- irradiated samples max at the level 33.5%, can be interpreted within the radiationinduced defect formation processes occurring in the structural network of glass. At the same time, as expected from literature, the observed decrease in the sample’s transparency at the level 33% upon radiation is plausibly caused by the accompanying radiation-induced oxidation processes that are the most probably related with appearance of As₂S₃ (arsenolite) crystals and S phases at the surface of y-irradiated sample, forming a white oxidized layer visible to the eye. The disadvantage of As₂S₃ glass to be selected as the best model object for X-ray diffraction study of y-radiation-structural changes, especially in respect to the first sharp diffraction peak, is considered. The author would like to thank Prof. V.M. Tsmots for
 stimulating discussions. The investigated samples used
 for measurements were prepared within joint research
 projects (#0106U007386 and #0109U007446c) between
 DSPU (Drohobych, Ukraine) and SRC “Carat” (Lviv,
 Ukraine) supported by the MES of Ukraine
 (#0106U007385 and #0109U007445). Optical
 spectroscopy experiments were performed within the of 2 to 3 months after y-irradiation, the optical
 transmission spectrum was measured again for the gAs₂S₃
 sample in the y-irradiated state. These
 measurements were performed to examine only the wellknown
 static radiation-induced optical effects, which are
 stable in the long period of time starting from 2 months
 after y-irradiation, as revealed for various systems of
 chalcogenide vitreous semiconductors [8-11, 13, 20-24]. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiation-induced optical darkening and oxidation effects in As₂S₃ glass Article published earlier |
| spellingShingle | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass Kavetskyy, T.S. |
| title | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass |
| title_full | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass |
| title_fullStr | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass |
| title_full_unstemmed | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass |
| title_short | Radiation-induced optical darkening and oxidation effects in As₂S₃ glass |
| title_sort | radiation-induced optical darkening and oxidation effects in as₂s₃ glass |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118483 |
| work_keys_str_mv | AT kavetskyyts radiationinducedopticaldarkeningandoxidationeffectsinas2s3glass |