Radiation-induced optical darkening and oxidation effects in As₂S₃ glass

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Author: Kavetskyy, T.S.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118483
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Radiation-induced optical darkening and oxidation effects in As₂S₃ glass / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 308-312. — Бібліогр.: 26 назв. — англ.

The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average energy E = 1.25 MeV and accumulated dose Ф = 2.41 MGy is reported. The red s...