Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118485
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Nanocrystalline Ge films created by thermal vacuum deposition on
 GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ.

The technique of thermal vacuum deposition of Ge onto GaAs substrates has
 been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films
 is confirmed by atomic force microscopy of their surface and by the data of Raman light
 scattering. The most probable size of the nanocrystallites forming the films decreases
 monotonically with decreasing their thickness. Electro conductivity of such the films
 proves to be high enough (1-10 Ohm·cm at room temperature) and has a character of
 variable range hopping conduction of Mott’s type. The hops, presumably, take place
 through the localized states connected with the grain boundaries.