Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nano...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118485 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118485 |
|---|---|
| record_format |
dspace |
| spelling |
Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. 2017-05-30T14:06:14Z 2017-05-30T14:06:14Z 2014 Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 73.63.-b, 81.07.-b https://nasplib.isofts.kiev.ua/handle/123456789/118485 The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nanocrystallites forming the films decreases monotonically with decreasing their thickness. Electro conductivity of such the films proves to be high enough (1-10 Ohm·cm at room temperature) and has a character of variable range hopping conduction of Mott’s type. The hops, presumably, take place through the localized states connected with the grain boundaries. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| spellingShingle |
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. |
| title_short |
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_full |
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_fullStr |
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_full_unstemmed |
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_sort |
nanocrystalline ge films created by thermal vacuum deposition on gaas substrates: structural and electric properties |
| author |
Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. |
| author_facet |
Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The technique of thermal vacuum deposition of Ge onto GaAs substrates has
been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films
is confirmed by atomic force microscopy of their surface and by the data of Raman light
scattering. The most probable size of the nanocrystallites forming the films decreases
monotonically with decreasing their thickness. Electro conductivity of such the films
proves to be high enough (1-10 Ohm·cm at room temperature) and has a character of
variable range hopping conduction of Mott’s type. The hops, presumably, take place
through the localized states connected with the grain boundaries.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118485 |
| citation_txt |
Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ. |
| work_keys_str_mv |
AT borblikvl nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties AT korchevoiaa nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties AT nikolenkoas nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties AT strelchukvv nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties AT fonkicham nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties AT shwartsyum nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties AT shwartsmm nanocrystallinegefilmscreatedbythermalvacuumdepositionongaassubstratesstructuralandelectricproperties |
| first_indexed |
2025-12-02T09:05:49Z |
| last_indexed |
2025-12-02T09:05:49Z |
| _version_ |
1850862003538624512 |