Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
The technique of thermal vacuum deposition of Ge onto GaAs substrates has
 been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films
 is confirmed by atomic force microscopy of their surface and by the data of Raman light
 scattering. The most p...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118485 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Nanocrystalline Ge films created by thermal vacuum deposition on
 GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862658872477483008 |
|---|---|
| author | Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. |
| author_facet | Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. |
| citation_txt | Nanocrystalline Ge films created by thermal vacuum deposition on
 GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The technique of thermal vacuum deposition of Ge onto GaAs substrates has
been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films
is confirmed by atomic force microscopy of their surface and by the data of Raman light
scattering. The most probable size of the nanocrystallites forming the films decreases
monotonically with decreasing their thickness. Electro conductivity of such the films
proves to be high enough (1-10 Ohm·cm at room temperature) and has a character of
variable range hopping conduction of Mott’s type. The hops, presumably, take place
through the localized states connected with the grain boundaries.
|
| first_indexed | 2025-12-02T09:05:49Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118485 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T09:05:49Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. 2017-05-30T14:06:14Z 2017-05-30T14:06:14Z 2014 Nanocrystalline Ge films created by thermal vacuum deposition on
 GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 73.63.-b, 81.07.-b https://nasplib.isofts.kiev.ua/handle/123456789/118485 The technique of thermal vacuum deposition of Ge onto GaAs substrates has
 been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films
 is confirmed by atomic force microscopy of their surface and by the data of Raman light
 scattering. The most probable size of the nanocrystallites forming the films decreases
 monotonically with decreasing their thickness. Electro conductivity of such the films
 proves to be high enough (1-10 Ohm·cm at room temperature) and has a character of
 variable range hopping conduction of Mott’s type. The hops, presumably, take place
 through the localized states connected with the grain boundaries. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties Article published earlier |
| spellingShingle | Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties Borblik, V.L. Korchevoi, A.A. Nikolenko, A.S. Strelchuk, V.V. Fonkich, A.M. Shwarts, Yu.M. Shwarts, M.M. |
| title | Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_full | Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_fullStr | Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_full_unstemmed | Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_short | Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties |
| title_sort | nanocrystalline ge films created by thermal vacuum deposition on gaas substrates: structural and electric properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118485 |
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