Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Borblik, V.L., Korchevoi, A.A., Nikolenko, A.S., Strelchuk, V.V., Fonkich, A.M., Shwarts, Yu.M., Shwarts, M.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118485
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Nanocrystalline Ge films created by thermal vacuum deposition on
 GaAs substrates: structural and electric properties / V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 237-242. — Бібліогр.: 10 назв. — англ.

The technique of thermal vacuum deposition of Ge onto GaAs substrates has
 been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films
 is confirmed by atomic force microscopy of their surface and by the data of Raman light
 scattering. The most p...