Dobrovolskyi, Y., Pidkamin, L., Brus, V., & Kuzenko, V. (2014). Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Dobrovolskyi, Yu, L. Pidkamin, V. Brus, und V. Kuzenko. "Photodiode Based on Epitaxial Silicon with High Sensitivity at the Wavelength 254 Nm." Semiconductor Physics Quantum Electronics & Optoelectronics 2014.
MLA-Zitierstil (8. Ausg.)Dobrovolskyi, Yu, et al. "Photodiode Based on Epitaxial Silicon with High Sensitivity at the Wavelength 254 Nm." Semiconductor Physics Quantum Electronics & Optoelectronics, 2014.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.