APA (7th ed.) Citation

Dobrovolskyi, Y., Pidkamin, L., Brus, V., & Kuzenko, V. (2014). Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Dobrovolskyi, Yu, L. Pidkamin, V. Brus, and V. Kuzenko. "Photodiode Based on Epitaxial Silicon with High Sensitivity at the Wavelength 254 Nm." Semiconductor Physics Quantum Electronics & Optoelectronics 2014.

MLA (8th ed.) Citation

Dobrovolskyi, Yu, et al. "Photodiode Based on Epitaxial Silicon with High Sensitivity at the Wavelength 254 Nm." Semiconductor Physics Quantum Electronics & Optoelectronics, 2014.

Warning: These citations may not always be 100% accurate.