Dobrovolskyi, Y., Pidkamin, L., Brus, V., & Kuzenko, V. (2014). Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationDobrovolskyi, Yu, L. Pidkamin, V. Brus, and V. Kuzenko. "Photodiode Based on Epitaxial Silicon with High Sensitivity at the Wavelength 254 Nm." Semiconductor Physics Quantum Electronics & Optoelectronics 2014.
MLA (8th ed.) CitationDobrovolskyi, Yu, et al. "Photodiode Based on Epitaxial Silicon with High Sensitivity at the Wavelength 254 Nm." Semiconductor Physics Quantum Electronics & Optoelectronics, 2014.
Warning: These citations may not always be 100% accurate.