Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118492 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118492 |
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Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. 2017-05-30T14:11:53Z 2017-05-30T14:11:53Z 2014 Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.80.Ba, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/118492 A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths larger than 600 nm and maximal values near the wavelength 254 nm. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| spellingShingle |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. |
| title_short |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_fullStr |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full_unstemmed |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_sort |
photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| author |
Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. |
| author_facet |
Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A mathematical model of the construction of silicon photodiode based on
epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave
spectral range is presented. The suggested model allows calculating the construction that
possesses low sensitivity for the wavelengths larger than 600 nm and maximal values
near the wavelength 254 nm.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118492 |
| citation_txt |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. |
| work_keys_str_mv |
AT dobrovolskyiyu photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT pidkaminl photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT brusv photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT kuzenkov photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm |
| first_indexed |
2025-12-07T13:07:41Z |
| last_indexed |
2025-12-07T13:07:41Z |
| _version_ |
1850854983912652800 |