Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2014
• Main Authors: Dobrovolskyi, Yu., Pidkamin, L., Brus, V., Kuzenko, V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118492
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Photodiode based on epitaxial silicon
 with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ.

A mathematical model of the construction of silicon photodiode based on
 epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave
 spectral range is presented. The suggested model allows calculating the construction that
 possesses low sensitiv...