Influence of weak magnetic fields treatment on photoluminescence of GaAs
Long-term transformations in photoluminescence of GaAs single crystals
 treated with pulsed weak magnetic fields have been obtained. Treatments were
 performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The
 defect structure transformations were...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118498 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Influence of weak magnetic fields treatment
 on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862601483402346496 |
|---|---|
| author | Red'ko, S.M. |
| author_facet | Red'ko, S.M. |
| citation_txt | Influence of weak magnetic fields treatment
 on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Long-term transformations in photoluminescence of GaAs single crystals
treated with pulsed weak magnetic fields have been obtained. Treatments were
performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The
defect structure transformations were inferred from the radiative recombination spectra
within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed
modifications related with electron-spin transformation is discussed.
|
| first_indexed | 2025-11-28T02:11:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118498 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T02:11:10Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Red'ko, S.M. 2017-05-30T14:16:10Z 2017-05-30T14:16:10Z 2014 Influence of weak magnetic fields treatment
 on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 78.55.Cr, 71.55.Eq https://nasplib.isofts.kiev.ua/handle/123456789/118498 Long-term transformations in photoluminescence of GaAs single crystals
 treated with pulsed weak magnetic fields have been obtained. Treatments were
 performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The
 defect structure transformations were inferred from the radiative recombination spectra
 within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed
 modifications related with electron-spin transformation is discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of weak magnetic fields treatment on photoluminescence of GaAs Article published earlier |
| spellingShingle | Influence of weak magnetic fields treatment on photoluminescence of GaAs Red'ko, S.M. |
| title | Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_full | Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_fullStr | Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_full_unstemmed | Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_short | Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_sort | influence of weak magnetic fields treatment on photoluminescence of gaas |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118498 |
| work_keys_str_mv | AT redkosm influenceofweakmagneticfieldstreatmentonphotoluminescenceofgaas |