Influence of weak magnetic fields treatment on photoluminescence of GaAs
Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The defect structure transformations were inferred from the radiat...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2014 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118498 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of weak magnetic fields treatment on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118498 |
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dspace |
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Red'ko, S.M. 2017-05-30T14:16:10Z 2017-05-30T14:16:10Z 2014 Influence of weak magnetic fields treatment on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 78.55.Cr, 71.55.Eq https://nasplib.isofts.kiev.ua/handle/123456789/118498 Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The defect structure transformations were inferred from the radiative recombination spectra within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed modifications related with electron-spin transformation is discussed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of weak magnetic fields treatment on photoluminescence of GaAs Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| spellingShingle |
Influence of weak magnetic fields treatment on photoluminescence of GaAs Red'ko, S.M. |
| title_short |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_full |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_fullStr |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_full_unstemmed |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_sort |
influence of weak magnetic fields treatment on photoluminescence of gaas |
| author |
Red'ko, S.M. |
| author_facet |
Red'ko, S.M. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Long-term transformations in photoluminescence of GaAs single crystals
treated with pulsed weak magnetic fields have been obtained. Treatments were
performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The
defect structure transformations were inferred from the radiative recombination spectra
within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed
modifications related with electron-spin transformation is discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118498 |
| citation_txt |
Influence of weak magnetic fields treatment on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. |
| work_keys_str_mv |
AT redkosm influenceofweakmagneticfieldstreatmentonphotoluminescenceofgaas |
| first_indexed |
2025-11-28T02:11:10Z |
| last_indexed |
2025-11-28T02:11:10Z |
| _version_ |
1850853200638246912 |