Conductivity type conversion in p-CdZnTe under pulsed laser irradiation
Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under
 irradiation with nanosecond pulses of YAG:Nd laser by using the power density
 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of
 several micrometers is observed....
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118500 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Conductivity type conversion in p-CdZnTe
 under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under
irradiation with nanosecond pulses of YAG:Nd laser by using the power density
5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of
several micrometers is observed. The surface-barrier structures were prepared by
electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the
photovoltaic response has been explained by formation of the graded band gap in the
irradiated region. The direct current conductivity has been proved to be determined by
the dislocation network.
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| ISSN: | 1560-8034 |