Conductivity type conversion in p-CdZnTe under pulsed laser irradiation

Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of several micrometers is observed. The surface-barrier str...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2014
Main Authors: Tetyorkin, V.V., Sukach, A.V., Krolevec, N.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118500
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Conductivity type conversion in p-CdZnTe under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of several micrometers is observed. The surface-barrier structures were prepared by electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the photovoltaic response has been explained by formation of the graded band gap in the irradiated region. The direct current conductivity has been proved to be determined by the dislocation network.
ISSN:1560-8034