Conductivity type conversion in p-CdZnTe under pulsed laser irradiation
Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under
 irradiation with nanosecond pulses of YAG:Nd laser by using the power density
 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of
 several micrometers is observed....
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2014 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118500 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Conductivity type conversion in p-CdZnTe
 under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862612657379475456 |
|---|---|
| author | Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. |
| author_facet | Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. |
| citation_txt | Conductivity type conversion in p-CdZnTe
 under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under
irradiation with nanosecond pulses of YAG:Nd laser by using the power density
5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of
several micrometers is observed. The surface-barrier structures were prepared by
electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the
photovoltaic response has been explained by formation of the graded band gap in the
irradiated region. The direct current conductivity has been proved to be determined by
the dislocation network.
|
| first_indexed | 2025-11-29T05:03:24Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118500 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-29T05:03:24Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. 2017-05-30T14:19:18Z 2017-05-30T14:19:18Z 2014 Conductivity type conversion in p-CdZnTe
 under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 78.20.nd, 73.50.Pz https://nasplib.isofts.kiev.ua/handle/123456789/118500 Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under
 irradiation with nanosecond pulses of YAG:Nd laser by using the power density
 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of
 several micrometers is observed. The surface-barrier structures were prepared by
 electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the
 photovoltaic response has been explained by formation of the graded band gap in the
 irradiated region. The direct current conductivity has been proved to be determined by
 the dislocation network. The authors would like to thank Prof. A. Medvid’ for
 providing samples of CdZnTe and helpful discussion. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Conductivity type conversion in p-CdZnTe under pulsed laser irradiation Article published earlier |
| spellingShingle | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. |
| title | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_full | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_fullStr | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_full_unstemmed | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_short | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_sort | conductivity type conversion in p-cdznte under pulsed laser irradiation |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118500 |
| work_keys_str_mv | AT tetyorkinvv conductivitytypeconversioninpcdznteunderpulsedlaserirradiation AT sukachav conductivitytypeconversioninpcdznteunderpulsedlaserirradiation AT krolevecnm conductivitytypeconversioninpcdznteunderpulsedlaserirradiation |