Conductivity type conversion in p-CdZnTe under pulsed laser irradiation
Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of several micrometers is observed. The surface-barrier str...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
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| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118500 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Conductivity type conversion in p-CdZnTe under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. |
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Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. 2017-05-30T14:19:18Z 2017-05-30T14:19:18Z 2014 Conductivity type conversion in p-CdZnTe under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 78.20.nd, 73.50.Pz https://nasplib.isofts.kiev.ua/handle/123456789/118500 Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of several micrometers is observed. The surface-barrier structures were prepared by electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the photovoltaic response has been explained by formation of the graded band gap in the irradiated region. The direct current conductivity has been proved to be determined by the dislocation network. The authors would like to thank Prof. A. Medvid’ for providing samples of CdZnTe and helpful discussion. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Conductivity type conversion in p-CdZnTe under pulsed laser irradiation Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| spellingShingle |
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. |
| title_short |
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_full |
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_fullStr |
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_full_unstemmed |
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation |
| title_sort |
conductivity type conversion in p-cdznte under pulsed laser irradiation |
| author |
Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. |
| author_facet |
Tetyorkin, V.V. Sukach, A.V. Krolevec, N.M. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Laser-induced surface modification is investigated in p-Cd₀.₉Zn₀.₁Te under
irradiation with nanosecond pulses of YAG:Nd laser by using the power density
5 MW/cm². Conductivity type conversion of the near-surface region with the thickness of
several micrometers is observed. The surface-barrier structures were prepared by
electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the
photovoltaic response has been explained by formation of the graded band gap in the
irradiated region. The direct current conductivity has been proved to be determined by
the dislocation network.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118500 |
| citation_txt |
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation / V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 291-294. — Бібліогр.: 15 назв. — англ. |
| work_keys_str_mv |
AT tetyorkinvv conductivitytypeconversioninpcdznteunderpulsedlaserirradiation AT sukachav conductivitytypeconversioninpcdznteunderpulsedlaserirradiation AT krolevecnm conductivitytypeconversioninpcdznteunderpulsedlaserirradiation |
| first_indexed |
2025-11-29T05:03:24Z |
| last_indexed |
2025-11-29T05:03:24Z |
| _version_ |
1850854535649558528 |