Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Steblova, O.V., Evtukh, A.A., Bratus’, O.I., Fedorenko, L.L., Voitovych, M.V., Lytvyn, O.S., Gavrylyuk, O.O., Semchuk, O.Yu.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118502
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ.

Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched
 SiOx film at the first stage and annealing at the second one. The ion-plasma
 sputtering method has been used for deposition of the SiOx film. The influence of
 thermal and laser annealing on SiOx film properties has been investigated. Formation of
 silicon nanoislands on oxide film surface has been observed by AFM both after thermal
 and laser annealing. The height and surface density of the nanoislands depends both on
 the silicon content in the initial SiOx film and temperature of thermal annealing. The
 higher annealing temperature causes formation of large nanoislands, but their surface
 density decreases. Comparison of nanoislands created at thermal and laser annealing
 shows that in case of laser annealing the nanoislands are higher and their surface density
 is lower. The intensity of laser irradiation influences on nanoisland parameters
 significantly. The growth of electrical conductivity with thermal annealing temperature
 has been observed. The influence of gas atmosphere during annealing is also significant
 in case of higher temperatures. In case of laser annealing at the beginning at low laser
 irradiation intensities, the SiOx film conductivity increases, but the following growth of
 intensity causes the decrease in electrical conductivity.