Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing
Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched
 SiOx film at the first stage and annealing at the second one. The ion-plasma
 sputtering method has been used for deposition of the SiOx film. The influence of
 thermal and laser annealing on S...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2014 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118502 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862748098475851776 |
|---|---|
| author | Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. |
| author_facet | Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. |
| citation_txt | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched
SiOx film at the first stage and annealing at the second one. The ion-plasma
sputtering method has been used for deposition of the SiOx film. The influence of
thermal and laser annealing on SiOx film properties has been investigated. Formation of
silicon nanoislands on oxide film surface has been observed by AFM both after thermal
and laser annealing. The height and surface density of the nanoislands depends both on
the silicon content in the initial SiOx film and temperature of thermal annealing. The
higher annealing temperature causes formation of large nanoislands, but their surface
density decreases. Comparison of nanoislands created at thermal and laser annealing
shows that in case of laser annealing the nanoislands are higher and their surface density
is lower. The intensity of laser irradiation influences on nanoisland parameters
significantly. The growth of electrical conductivity with thermal annealing temperature
has been observed. The influence of gas atmosphere during annealing is also significant
in case of higher temperatures. In case of laser annealing at the beginning at low laser
irradiation intensities, the SiOx film conductivity increases, but the following growth of
intensity causes the decrease in electrical conductivity.
|
| first_indexed | 2025-12-07T20:54:04Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118502 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:54:04Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. 2017-05-30T14:20:29Z 2017-05-30T14:20:29Z 2014 Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 68.35.bg, 68.37.Tj, 78.20.-e https://nasplib.isofts.kiev.ua/handle/123456789/118502 Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched
 SiOx film at the first stage and annealing at the second one. The ion-plasma
 sputtering method has been used for deposition of the SiOx film. The influence of
 thermal and laser annealing on SiOx film properties has been investigated. Formation of
 silicon nanoislands on oxide film surface has been observed by AFM both after thermal
 and laser annealing. The height and surface density of the nanoislands depends both on
 the silicon content in the initial SiOx film and temperature of thermal annealing. The
 higher annealing temperature causes formation of large nanoislands, but their surface
 density decreases. Comparison of nanoislands created at thermal and laser annealing
 shows that in case of laser annealing the nanoislands are higher and their surface density
 is lower. The intensity of laser irradiation influences on nanoisland parameters
 significantly. The growth of electrical conductivity with thermal annealing temperature
 has been observed. The influence of gas atmosphere during annealing is also significant
 in case of higher temperatures. In case of laser annealing at the beginning at low laser
 irradiation intensities, the SiOx film conductivity increases, but the following growth of
 intensity causes the decrease in electrical conductivity. This research was supported in part by the Project Nos.
 1.1.7.30/21-DP and 85/14-H from National Academy of
 Sciences of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing Article published earlier |
| spellingShingle | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. |
| title | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_full | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_fullStr | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_full_unstemmed | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_short | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_sort | transformation of siox films into nanocomposite sio₂(si) films under thermal and laser annealing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118502 |
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