Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing
Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx film. The influence of thermal and laser annealing on SiOx film properties has...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Zitieren: | Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ. |
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Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. 2017-05-30T14:20:29Z 2017-05-30T14:20:29Z 2014 Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 68.35.bg, 68.37.Tj, 78.20.-e https://nasplib.isofts.kiev.ua/handle/123456789/118502 Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx film. The influence of thermal and laser annealing on SiOx film properties has been investigated. Formation of silicon nanoislands on oxide film surface has been observed by AFM both after thermal and laser annealing. The height and surface density of the nanoislands depends both on the silicon content in the initial SiOx film and temperature of thermal annealing. The higher annealing temperature causes formation of large nanoislands, but their surface density decreases. Comparison of nanoislands created at thermal and laser annealing shows that in case of laser annealing the nanoislands are higher and their surface density is lower. The intensity of laser irradiation influences on nanoisland parameters significantly. The growth of electrical conductivity with thermal annealing temperature has been observed. The influence of gas atmosphere during annealing is also significant in case of higher temperatures. In case of laser annealing at the beginning at low laser irradiation intensities, the SiOx film conductivity increases, but the following growth of intensity causes the decrease in electrical conductivity. This research was supported in part by the Project Nos. 1.1.7.30/21-DP and 85/14-H from National Academy of Sciences of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| spellingShingle |
Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. |
| title_short |
Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_full |
Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_fullStr |
Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_full_unstemmed |
Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing |
| title_sort |
transformation of siox films into nanocomposite sio₂(si) films under thermal and laser annealing |
| author |
Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. |
| author_facet |
Steblova, O.V. Evtukh, A.A. Bratus’, O.I. Fedorenko, L.L. Voitovych, M.V. Lytvyn, O.S. Gavrylyuk, O.O. Semchuk, O.Yu. |
| publishDate |
2014 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched
SiOx film at the first stage and annealing at the second one. The ion-plasma
sputtering method has been used for deposition of the SiOx film. The influence of
thermal and laser annealing on SiOx film properties has been investigated. Formation of
silicon nanoislands on oxide film surface has been observed by AFM both after thermal
and laser annealing. The height and surface density of the nanoislands depends both on
the silicon content in the initial SiOx film and temperature of thermal annealing. The
higher annealing temperature causes formation of large nanoislands, but their surface
density decreases. Comparison of nanoislands created at thermal and laser annealing
shows that in case of laser annealing the nanoislands are higher and their surface density
is lower. The intensity of laser irradiation influences on nanoisland parameters
significantly. The growth of electrical conductivity with thermal annealing temperature
has been observed. The influence of gas atmosphere during annealing is also significant
in case of higher temperatures. In case of laser annealing at the beginning at low laser
irradiation intensities, the SiOx film conductivity increases, but the following growth of
intensity causes the decrease in electrical conductivity.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118502 |
| citation_txt |
Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ. |
| work_keys_str_mv |
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| first_indexed |
2025-12-07T20:54:04Z |
| last_indexed |
2025-12-07T20:54:04Z |
| _version_ |
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