Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2014
• Hauptverfasser: Steblova, O.V., Evtukh, A.A., Bratus’, O.I., Fedorenko, L.L., Voitovych, M.V., Lytvyn, O.S., Gavrylyuk, O.O., Semchuk, O.Yu.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118502
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing / O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 295-300. — Бібліогр.: 24 назв. — англ.

Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx film. The influence of thermal and laser annealing on SiOx film properties has...