Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering

Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering

Ternary Zn₁₋xCdxO (x < 0.12) alloy crystalline films with highly preferred orientation (002) have been successfully deposited on sapphire c-Al₂O₃ substrates using the direct current (dc) reactive magnetron sputtering technique and annealed at temperature 600 °C in air. The structural and optic...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2014
Автори: Kolomys, O., Romanyuk, A., Strelchuk, V., Lashkarev, G., Khyzhun, O., Timofeeva, I., Lazorenko, V., Khomyak, V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118505
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering / O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 275-283. — Бібліогр.: 28 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118505
record_format dspace
spelling Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
2017-05-30T14:22:28Z
2017-05-30T14:22:28Z
2014
Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering / O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 275-283. — Бібліогр.: 28 назв. — англ.
1560-8034
PACS 61.05.cp, 64.75.St, 78.30.Fs, 79.60.-i
https://nasplib.isofts.kiev.ua/handle/123456789/118505
Ternary Zn₁₋xCdxO (x < 0.12) alloy crystalline films with highly preferred orientation (002) have been successfully deposited on sapphire c-Al₂O₃ substrates using the direct current (dc) reactive magnetron sputtering technique and annealed at temperature 600 °C in air. The structural and optical properties of Zn₁₋xCdxO thin films were systematically studied using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), micro-Raman and photoluminescent (PL) spectroscopy. XPS measurements clearly confirmed Cd incorporation into ZnO lattice. XRD data revealed that the growth of wurtzite Zn₁₋xCdxO films occurs preferentially in the (002) direction. Also, when the Cd content is increased, the XRD peaks shift towards smaller angles and the full width at half-maximum of the lines increases. When the Cd content increases, LO A1 ( Zn₁₋CdxO )-like Raman modes show composition dependent frequency decrease and asymmetrical broadening. The near band-edge PL emission at room temperature shifts gradually to lower energies as the Cd content increases and reaches 2.68 eV for the highest Cd content (x = 0.12). The analysis of NBE band emission and Raman LO A1 ( Zn₁₋xCdxO ) mode shows that at a higher Cd content the coexistence of Zn₁₋xCdxO areas with different concentrations of Cd inside the same film occurs. The presence of CdO in annealed Zn₁₋xCdxO films with the higher Cd content was confirmed by Raman spectra of cubic CdO nanoinclusions. The XRD data also revealed phase segregation of cubic CdO in annealed Zn₁₋xCdxO films (Tann = 600 °C) for x ≥ 0.013.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
spellingShingle Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
title_short Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_full Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_fullStr Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_full_unstemmed Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_sort optical and structural studies of phase transformations and composition fluctuations at annealing of zn₁₋xcdxo films grown by dc magnetron sputtering
author Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
author_facet Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
publishDate 2014
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Ternary Zn₁₋xCdxO (x < 0.12) alloy crystalline films with highly preferred orientation (002) have been successfully deposited on sapphire c-Al₂O₃ substrates using the direct current (dc) reactive magnetron sputtering technique and annealed at temperature 600 °C in air. The structural and optical properties of Zn₁₋xCdxO thin films were systematically studied using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), micro-Raman and photoluminescent (PL) spectroscopy. XPS measurements clearly confirmed Cd incorporation into ZnO lattice. XRD data revealed that the growth of wurtzite Zn₁₋xCdxO films occurs preferentially in the (002) direction. Also, when the Cd content is increased, the XRD peaks shift towards smaller angles and the full width at half-maximum of the lines increases. When the Cd content increases, LO A1 ( Zn₁₋CdxO )-like Raman modes show composition dependent frequency decrease and asymmetrical broadening. The near band-edge PL emission at room temperature shifts gradually to lower energies as the Cd content increases and reaches 2.68 eV for the highest Cd content (x = 0.12). The analysis of NBE band emission and Raman LO A1 ( Zn₁₋xCdxO ) mode shows that at a higher Cd content the coexistence of Zn₁₋xCdxO areas with different concentrations of Cd inside the same film occurs. The presence of CdO in annealed Zn₁₋xCdxO films with the higher Cd content was confirmed by Raman spectra of cubic CdO nanoinclusions. The XRD data also revealed phase segregation of cubic CdO in annealed Zn₁₋xCdxO films (Tann = 600 °C) for x ≥ 0.013.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118505
citation_txt Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering / O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 275-283. — Бібліогр.: 28 назв. — англ.
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first_indexed 2025-12-07T17:46:16Z
last_indexed 2025-12-07T17:46:16Z
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