Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering

Ternary Zn₁₋xCdxO (x < 0.12) alloy crystalline films with highly preferred
 orientation (002) have been successfully deposited on sapphire c-Al₂O₃ substrates using
 the direct current (dc) reactive magnetron sputtering technique and annealed at
 temperature 600 °C in a...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2014
Main Authors: Kolomys, O., Romanyuk, A., Strelchuk, V., Lashkarev, G., Khyzhun, O., Timofeeva, I., Lazorenko, V., Khomyak, V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118505
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Cite this:Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering / O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 275-283. — Бібліогр.: 28 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
author_facet Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
citation_txt Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering / O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 275-283. — Бібліогр.: 28 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Ternary Zn₁₋xCdxO (x < 0.12) alloy crystalline films with highly preferred
 orientation (002) have been successfully deposited on sapphire c-Al₂O₃ substrates using
 the direct current (dc) reactive magnetron sputtering technique and annealed at
 temperature 600 °C in air. The structural and optical properties of Zn₁₋xCdxO thin films
 were systematically studied using X-ray photoelectron spectroscopy (XPS), X-ray
 diffraction (XRD), micro-Raman and photoluminescent (PL) spectroscopy. XPS
 measurements clearly confirmed Cd incorporation into ZnO lattice. XRD data revealed
 that the growth of wurtzite Zn₁₋xCdxO films occurs preferentially in the (002) direction.
 Also, when the Cd content is increased, the XRD peaks shift towards smaller angles and
 the full width at half-maximum of the lines increases. When the Cd content increases,
 LO A1 ( Zn₁₋CdxO )-like Raman modes show composition dependent frequency decrease
 and asymmetrical broadening. The near band-edge PL emission at room temperature
 shifts gradually to lower energies as the Cd content increases and reaches 2.68 eV for the
 highest Cd content (x = 0.12). The analysis of NBE band emission and Raman LO A1 ( Zn₁₋xCdxO ) mode shows that at a higher Cd content the coexistence of
 Zn₁₋xCdxO areas with different concentrations of Cd inside the same film occurs. The
 presence of CdO in annealed Zn₁₋xCdxO films with the higher Cd content was
 confirmed by Raman spectra of cubic CdO nanoinclusions. The XRD data also revealed
 phase segregation of cubic CdO in annealed Zn₁₋xCdxO films (Tann = 600 °C) for
 x ≥ 0.013.
first_indexed 2025-12-07T17:46:16Z
format Article
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-12-07T17:46:16Z
publishDate 2014
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
2017-05-30T14:22:28Z
2017-05-30T14:22:28Z
2014
Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering / O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 275-283. — Бібліогр.: 28 назв. — англ.
1560-8034
PACS 61.05.cp, 64.75.St, 78.30.Fs, 79.60.-i
https://nasplib.isofts.kiev.ua/handle/123456789/118505
Ternary Zn₁₋xCdxO (x < 0.12) alloy crystalline films with highly preferred
 orientation (002) have been successfully deposited on sapphire c-Al₂O₃ substrates using
 the direct current (dc) reactive magnetron sputtering technique and annealed at
 temperature 600 °C in air. The structural and optical properties of Zn₁₋xCdxO thin films
 were systematically studied using X-ray photoelectron spectroscopy (XPS), X-ray
 diffraction (XRD), micro-Raman and photoluminescent (PL) spectroscopy. XPS
 measurements clearly confirmed Cd incorporation into ZnO lattice. XRD data revealed
 that the growth of wurtzite Zn₁₋xCdxO films occurs preferentially in the (002) direction.
 Also, when the Cd content is increased, the XRD peaks shift towards smaller angles and
 the full width at half-maximum of the lines increases. When the Cd content increases,
 LO A1 ( Zn₁₋CdxO )-like Raman modes show composition dependent frequency decrease
 and asymmetrical broadening. The near band-edge PL emission at room temperature
 shifts gradually to lower energies as the Cd content increases and reaches 2.68 eV for the
 highest Cd content (x = 0.12). The analysis of NBE band emission and Raman LO A1 ( Zn₁₋xCdxO ) mode shows that at a higher Cd content the coexistence of
 Zn₁₋xCdxO areas with different concentrations of Cd inside the same film occurs. The
 presence of CdO in annealed Zn₁₋xCdxO films with the higher Cd content was
 confirmed by Raman spectra of cubic CdO nanoinclusions. The XRD data also revealed
 phase segregation of cubic CdO in annealed Zn₁₋xCdxO films (Tann = 600 °C) for
 x ≥ 0.013.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
Article
published earlier
spellingShingle Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
Kolomys, O.
Romanyuk, A.
Strelchuk, V.
Lashkarev, G.
Khyzhun, O.
Timofeeva, I.
Lazorenko, V.
Khomyak, V.
title Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_full Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_fullStr Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_full_unstemmed Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_short Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering
title_sort optical and structural studies of phase transformations and composition fluctuations at annealing of zn₁₋xcdxo films grown by dc magnetron sputtering
url https://nasplib.isofts.kiev.ua/handle/123456789/118505
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