A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs structures. It assumes that the centers of electron-hole recombination are redistributed because of resonance interaction between dislocations of...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2014 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118513 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | A model is considered that explains mechanism of non-thermal action of
microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs
structures. It assumes that the centers of electron-hole recombination are redistributed
because of resonance interaction between dislocations of certain length and microwave
radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the
oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of
the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes.
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| ISSN: | 1560-8034 |