A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
A model is considered that explains mechanism of non-thermal action of
 microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs
 structures. It assumes that the centers of electron-hole recombination are redistributed
 because of resonance interaction...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2014 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118513 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | A model for non-thermal action of microwave radiation
 on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862651252390756352 |
|---|---|
| author | Okhrimenko, O.B. |
| author_facet | Okhrimenko, O.B. |
| citation_txt | A model for non-thermal action of microwave radiation
 on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A model is considered that explains mechanism of non-thermal action of
microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs
structures. It assumes that the centers of electron-hole recombination are redistributed
because of resonance interaction between dislocations of certain length and microwave
radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the
oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of
the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes.
|
| first_indexed | 2025-12-01T19:42:06Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118513 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T19:42:06Z |
| publishDate | 2014 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Okhrimenko, O.B. 2017-05-30T14:27:20Z 2017-05-30T14:27:20Z 2014 A model for non-thermal action of microwave radiation
 on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 78.70.Fy, 78.70.Gq https://nasplib.isofts.kiev.ua/handle/123456789/118513 A model is considered that explains mechanism of non-thermal action of
 microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs
 structures. It assumes that the centers of electron-hole recombination are redistributed
 because of resonance interaction between dislocations of certain length and microwave
 radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the
 oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of
 the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes. The author is indebted to Prof. A.M. Svetlichnyi for his
 interest in this work and valuable discussions en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics A model for non-thermal action of microwave radiation on oxide film/semiconductor structures Article published earlier |
| spellingShingle | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures Okhrimenko, O.B. |
| title | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_full | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_fullStr | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_full_unstemmed | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_short | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_sort | model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118513 |
| work_keys_str_mv | AT okhrimenkoob amodelfornonthermalactionofmicrowaveradiationonoxidefilmsemiconductorstructures AT okhrimenkoob modelfornonthermalactionofmicrowaveradiationonoxidefilmsemiconductorstructures |