Zinc oxide for electronic, photovoltaic and optoelectronic applications
We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various s...
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| Published in: | Физика низких температур |
|---|---|
| Date: | 2011 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2011
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118518 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862679305843113984 |
|---|---|
| author | Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. |
| author_facet | Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. |
| citation_txt | Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.
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| first_indexed | 2025-12-07T15:43:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118518 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T15:43:00Z |
| publishDate | 2011 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. 2017-05-30T14:51:23Z 2017-05-30T14:51:23Z 2011 Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ. 0132-6414 PACS: 81.05.Dz, 85.40.Xx, 75.50.Pp, 81.05.Fb, 88.40.jm, 88.40.jr https://nasplib.isofts.kiev.ua/handle/123456789/118518 We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work. This work was supported in part by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08). en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур XVIII Уральская международная зимняя школа по физике полупроводников Zinc oxide for electronic, photovoltaic and optoelectronic applications Article published earlier |
| spellingShingle | Zinc oxide for electronic, photovoltaic and optoelectronic applications Godlewski, M. Guziewicz, E. Kopalko, K. Łuka, G. Łukasiewicz, M.I. Krajewski, T. Witkowski, B.S. Gierałtowska, S. XVIII Уральская международная зимняя школа по физике полупроводников |
| title | Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_full | Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_fullStr | Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_full_unstemmed | Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_short | Zinc oxide for electronic, photovoltaic and optoelectronic applications |
| title_sort | zinc oxide for electronic, photovoltaic and optoelectronic applications |
| topic | XVIII Уральская международная зимняя школа по физике полупроводников |
| topic_facet | XVIII Уральская международная зимняя школа по физике полупроводников |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118518 |
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