Zinc oxide for electronic, photovoltaic and optoelectronic applications

We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various s...

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Опубліковано в: :Физика низких температур
Дата:2011
Автори: Godlewski, M., Guziewicz, E., Kopalko, K., Łuka, G., Łukasiewicz, M.I., Krajewski, T., Witkowski, B.S., Gierałtowska, S.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2011
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Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118518
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118518
record_format dspace
spelling Godlewski, M.
Guziewicz, E.
Kopalko, K.
Łuka, G.
Łukasiewicz, M.I.
Krajewski, T.
Witkowski, B.S.
Gierałtowska, S.
2017-05-30T14:51:23Z
2017-05-30T14:51:23Z
2011
Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ.
0132-6414
PACS: 81.05.Dz, 85.40.Xx, 75.50.Pp, 81.05.Fb, 88.40.jm, 88.40.jr
https://nasplib.isofts.kiev.ua/handle/123456789/118518
We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.
This work was supported in part by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08).
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
XVIII Уральская международная зимняя школа по физике полупроводников
Zinc oxide for electronic, photovoltaic and optoelectronic applications
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Zinc oxide for electronic, photovoltaic and optoelectronic applications
spellingShingle Zinc oxide for electronic, photovoltaic and optoelectronic applications
Godlewski, M.
Guziewicz, E.
Kopalko, K.
Łuka, G.
Łukasiewicz, M.I.
Krajewski, T.
Witkowski, B.S.
Gierałtowska, S.
XVIII Уральская международная зимняя школа по физике полупроводников
title_short Zinc oxide for electronic, photovoltaic and optoelectronic applications
title_full Zinc oxide for electronic, photovoltaic and optoelectronic applications
title_fullStr Zinc oxide for electronic, photovoltaic and optoelectronic applications
title_full_unstemmed Zinc oxide for electronic, photovoltaic and optoelectronic applications
title_sort zinc oxide for electronic, photovoltaic and optoelectronic applications
author Godlewski, M.
Guziewicz, E.
Kopalko, K.
Łuka, G.
Łukasiewicz, M.I.
Krajewski, T.
Witkowski, B.S.
Gierałtowska, S.
author_facet Godlewski, M.
Guziewicz, E.
Kopalko, K.
Łuka, G.
Łukasiewicz, M.I.
Krajewski, T.
Witkowski, B.S.
Gierałtowska, S.
topic XVIII Уральская международная зимняя школа по физике полупроводников
topic_facet XVIII Уральская международная зимняя школа по физике полупроводников
publishDate 2011
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description We demonstrate that the atomic layer deposition (ALD) technique has large potential to be widely used in a production of ZnO films for applications in electronic, photovoltaic (PV) and optoelectronic devices. Low growth temperature makes the ALD-grown ZnO films suitable for construction of various semiconductor/organic material hybrid structures. This opens possibilities of construction of novel devices based on very cheap organic materials. This includes organic light emitting diodes and PV cells of the third generation, as discussed in the present work.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/118518
citation_txt Zinc oxide for electronic, photovoltaic and optoelectronic applications / M. Godlewski, E. Guziewicz, K. Kopalko, G. Łuka, M.I. Łukasiewicz, T. Krajewski, B.S. Witkowski, S. Gierałtowska // Физика низких температур. — 2011. — Т. 37, № 3. — С. 301–307. — Бібліогр.: 44 назв. — англ.
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AT łukasiewiczmi zincoxideforelectronicphotovoltaicandoptoelectronicapplications
AT krajewskit zincoxideforelectronicphotovoltaicandoptoelectronicapplications
AT witkowskibs zincoxideforelectronicphotovoltaicandoptoelectronicapplications
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