Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films

Nd₀.₅₂Sr₀.₄₈MnO₃ films with the different thickness have been prepared by dc magnetron sputtering on LaAlO₃ (001) single-crystalline substrates. A decrease of the film thickness leads to a significant suppression of the ferromagnetic (FM) ordering and the Curie point becomes below the antiferromagne...

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Published in:Физика низких температур
Date:2011
Main Authors: Prokhorov, V.G., Kaminsky, G.G., Kim, J.M., Eom, T.W., Park, J.S., Lee, Y.P., Svetchnikov, V.L., Levtchenko, G.G., Nikolaenko, Yu.M., Khokhlov, V.A.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2011
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Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118533
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films / V.G. Prokhorov, G.G. Kaminsky, J.M. Kim, T.W. Eom, J.S. Park, Y.P. Lee, V.L. Svetchnikov, G.G. Levtchenko, Yu.M. Nikolaenko, V.A. Khokhlov // Физика низких температур. — 2011. — Т. 37, № 4. — С. 392–396. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118533
record_format dspace
spelling Prokhorov, V.G.
Kaminsky, G.G.
Kim, J.M.
Eom, T.W.
Park, J.S.
Lee, Y.P.
Svetchnikov, V.L.
Levtchenko, G.G.
Nikolaenko, Yu.M.
Khokhlov, V.A.
2017-05-30T15:09:10Z
2017-05-30T15:09:10Z
2011
Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films / V.G. Prokhorov, G.G. Kaminsky, J.M. Kim, T.W. Eom, J.S. Park, Y.P. Lee, V.L. Svetchnikov, G.G. Levtchenko, Yu.M. Nikolaenko, V.A. Khokhlov // Физика низких температур. — 2011. — Т. 37, № 4. — С. 392–396. — Бібліогр.: 16 назв. — англ.
0132-6414
PACS: 71.30.+h, 75.47.Gk, 75.47.Lx
https://nasplib.isofts.kiev.ua/handle/123456789/118533
Nd₀.₅₂Sr₀.₄₈MnO₃ films with the different thickness have been prepared by dc magnetron sputtering on LaAlO₃ (001) single-crystalline substrates. A decrease of the film thickness leads to a significant suppression of the ferromagnetic (FM) ordering and the Curie point becomes below the antiferromagnetic (AFM) transition temperature. As this take place, a huge rise of the magnetoresistance ratio from 400 to 60 000% at an applied magnetic field of 5 T is observed. We consider that this new kind of the enhanced colossal magnetoresistance effect is originated from the FM/AFM competition and the collapse of the charge-ordered state at high magnetic field rather than through the regular double-exchange mechanism.
This work was supported by the NRF/MEST through the Quantum Photonic Science Research Center, Korea. V. Svetchnikov is grateful to the financial support of Netherlands Institute for Metal Research.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Низкотемпературный магнетизм
Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films
spellingShingle Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films
Prokhorov, V.G.
Kaminsky, G.G.
Kim, J.M.
Eom, T.W.
Park, J.S.
Lee, Y.P.
Svetchnikov, V.L.
Levtchenko, G.G.
Nikolaenko, Yu.M.
Khokhlov, V.A.
Низкотемпературный магнетизм
title_short Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films
title_full Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films
title_fullStr Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films
title_full_unstemmed Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films
title_sort origin of an enhanced colossal magnetoresistance effect in epitaxial nd₀.₅₂sr₀.₄₈mno₃ thin films
author Prokhorov, V.G.
Kaminsky, G.G.
Kim, J.M.
Eom, T.W.
Park, J.S.
Lee, Y.P.
Svetchnikov, V.L.
Levtchenko, G.G.
Nikolaenko, Yu.M.
Khokhlov, V.A.
author_facet Prokhorov, V.G.
Kaminsky, G.G.
Kim, J.M.
Eom, T.W.
Park, J.S.
Lee, Y.P.
Svetchnikov, V.L.
Levtchenko, G.G.
Nikolaenko, Yu.M.
Khokhlov, V.A.
topic Низкотемпературный магнетизм
topic_facet Низкотемпературный магнетизм
publishDate 2011
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description Nd₀.₅₂Sr₀.₄₈MnO₃ films with the different thickness have been prepared by dc magnetron sputtering on LaAlO₃ (001) single-crystalline substrates. A decrease of the film thickness leads to a significant suppression of the ferromagnetic (FM) ordering and the Curie point becomes below the antiferromagnetic (AFM) transition temperature. As this take place, a huge rise of the magnetoresistance ratio from 400 to 60 000% at an applied magnetic field of 5 T is observed. We consider that this new kind of the enhanced colossal magnetoresistance effect is originated from the FM/AFM competition and the collapse of the charge-ordered state at high magnetic field rather than through the regular double-exchange mechanism.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/118533
citation_txt Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd₀.₅₂Sr₀.₄₈MnO₃ thin films / V.G. Prokhorov, G.G. Kaminsky, J.M. Kim, T.W. Eom, J.S. Park, Y.P. Lee, V.L. Svetchnikov, G.G. Levtchenko, Yu.M. Nikolaenko, V.A. Khokhlov // Физика низких температур. — 2011. — Т. 37, № 4. — С. 392–396. — Бібліогр.: 16 назв. — англ.
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