Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2010
• Автори: Milenin, V.V., Red’ko, R.A.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118555
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of pulsing magnetic field on radiative recombination spectra
 of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ.

We present the results of investigations concerning the effect caused by weak
 magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of
 impurity-defect composition. This effect was found when studying the radiative
 recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was
 obtained that a short-term influence of field initiates long-term changes in the intensity of
 radiative recombination inherent to centers of different nature. General regularities in
 behavior of the luminescence intensity have been found. This intensity changes with the
 concentration of recombination centers. A possible mechanism of observed
 transformations has been discussed.