Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Milenin, V.V., Red’ko, R.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118555
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ.

We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was obtained that a short-term influence of field initiates long-term changes in the intensity of radiative recombination inherent to centers of different nature. General regularities in behavior of the luminescence intensity have been found. This intensity changes with the concentration of recombination centers. A possible mechanism of observed transformations has been discussed.