Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals
We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra within the range 0.6 t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2010 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118555 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ. |
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Milenin, V.V. Red’ko, R.A. 2017-05-30T16:10:20Z 2017-05-30T16:10:20Z 2010 Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 68.55.-a, 71.55.Eq https://nasplib.isofts.kiev.ua/handle/123456789/118555 We present the results of investigations concerning the effect caused by weak magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was obtained that a short-term influence of field initiates long-term changes in the intensity of radiative recombination inherent to centers of different nature. General regularities in behavior of the luminescence intensity have been found. This intensity changes with the concentration of recombination centers. A possible mechanism of observed transformations has been discussed. Authors are grateful to Dr. R.V. Konakova for her permanent interest to the work and fruitful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| spellingShingle |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals Milenin, V.V. Red’ko, R.A. |
| title_short |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_full |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_fullStr |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_full_unstemmed |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals |
| title_sort |
effect of pulsing magnetic field on radiative recombination spectra of gap and inp single crystals |
| author |
Milenin, V.V. Red’ko, R.A. |
| author_facet |
Milenin, V.V. Red’ko, R.A. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We present the results of investigations concerning the effect caused by weak
magnetic field (B = 15 mT and 60 mT) treatment on GaP and InP single crystals of
impurity-defect composition. This effect was found when studying the radiative
recombination (luminescence) spectra within the range 0.6 to 2.5 µm at 77 K. It was
obtained that a short-term influence of field initiates long-term changes in the intensity of
radiative recombination inherent to centers of different nature. General regularities in
behavior of the luminescence intensity have been found. This intensity changes with the
concentration of recombination centers. A possible mechanism of observed
transformations has been discussed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118555 |
| citation_txt |
Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals / V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 379-383. — Бібліогр.: 18 назв. — англ. |
| work_keys_str_mv |
AT mileninvv effectofpulsingmagneticfieldonradiativerecombinationspectraofgapandinpsinglecrystals AT redkora effectofpulsingmagneticfieldonradiativerecombinationspectraofgapandinpsinglecrystals |
| first_indexed |
2025-12-07T16:08:06Z |
| last_indexed |
2025-12-07T16:08:06Z |
| _version_ |
1850866334473125888 |