Magnetic susceptibility of n- and p-Si single crystals containing thermodonors

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Babich, V.М., Luchkevych, M.M., Tsmots, V.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118557
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Magnetic susceptibility of n- and p-Si single crystals containing thermodonors / V.М. Babich, M.M. Luchkevych, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 384-388. — Бібліогр.: 12 назв. — англ.

Using a series of experimental methods (Hall effect, electron paramagnetic
 resonance and magnetic susceptibility (MS, χ)) comparison has been made for the
 kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged
 and shallow ones) under thermal treatments (TT) at 450 °C with the kinetics of
 paramagnetic center accumulation in the samples obtained by the MS method. The
 absence of correlation between these dependences has been shown. The dependences
 χ(H) obtained both at 300 and 77 K that have orientation and paramagnetic component
 determine neither of these two kinds of TD-centers as it was in the case of 450 °C TT for
 p-Si(B) samples where the χ
 par component is determined by the concentration of deep
 TDs (Еі ≥ 0.2 еV). The χ(H) value in the n-Si(P) samples after TT at 450 °C is
 determined, evidently, by intermediate non-stable complexes, as well as by those formed
 during rapid cooling the samples