Magnetic susceptibility of n- and p-Si single crystals containing thermodonors
Using a series of experimental methods (Hall effect, electron paramagnetic
 resonance and magnetic susceptibility (MS, χ)) comparison has been made for the
 kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged
 and shallow ones) under therma...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2010 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118557 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors / V.М. Babich, M.M. Luchkevych, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 384-388. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862666535486619648 |
|---|---|
| author | Babich, V.М. Luchkevych, M.M. Tsmots, V.M. |
| author_facet | Babich, V.М. Luchkevych, M.M. Tsmots, V.M. |
| citation_txt | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors / V.М. Babich, M.M. Luchkevych, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 384-388. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Using a series of experimental methods (Hall effect, electron paramagnetic
resonance and magnetic susceptibility (MS, χ)) comparison has been made for the
kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged
and shallow ones) under thermal treatments (TT) at 450 °C with the kinetics of
paramagnetic center accumulation in the samples obtained by the MS method. The
absence of correlation between these dependences has been shown. The dependences
χ(H) obtained both at 300 and 77 K that have orientation and paramagnetic component
determine neither of these two kinds of TD-centers as it was in the case of 450 °C TT for
p-Si(B) samples where the χ
par component is determined by the concentration of deep
TDs (Еі ≥ 0.2 еV). The χ(H) value in the n-Si(P) samples after TT at 450 °C is
determined, evidently, by intermediate non-stable complexes, as well as by those formed
during rapid cooling the samples
|
| first_indexed | 2025-12-07T15:20:23Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118557 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:20:23Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Babich, V.М. Luchkevych, M.M. Tsmots, V.M. 2017-05-30T16:11:51Z 2017-05-30T16:11:51Z 2010 Magnetic susceptibility of n- and p-Si single crystals containing thermodonors / V.М. Babich, M.M. Luchkevych, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 384-388. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 75.20.-g, 75.30.Cr, 75.40.Cx https://nasplib.isofts.kiev.ua/handle/123456789/118557 Using a series of experimental methods (Hall effect, electron paramagnetic
 resonance and magnetic susceptibility (MS, χ)) comparison has been made for the
 kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged
 and shallow ones) under thermal treatments (TT) at 450 °C with the kinetics of
 paramagnetic center accumulation in the samples obtained by the MS method. The
 absence of correlation between these dependences has been shown. The dependences
 χ(H) obtained both at 300 and 77 K that have orientation and paramagnetic component
 determine neither of these two kinds of TD-centers as it was in the case of 450 °C TT for
 p-Si(B) samples where the χ
 par component is determined by the concentration of deep
 TDs (Еі ≥ 0.2 еV). The χ(H) value in the n-Si(P) samples after TT at 450 °C is
 determined, evidently, by intermediate non-stable complexes, as well as by those formed
 during rapid cooling the samples en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Magnetic susceptibility of n- and p-Si single crystals containing thermodonors Article published earlier |
| spellingShingle | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors Babich, V.М. Luchkevych, M.M. Tsmots, V.M. |
| title | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_full | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_fullStr | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_full_unstemmed | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_short | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_sort | magnetic susceptibility of n- and p-si single crystals containing thermodonors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118557 |
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