Magnetic susceptibility of n- and p-Si single crystals containing thermodonors
Using a series of experimental methods (Hall effect, electron paramagnetic resonance and magnetic susceptibility (MS, χ)) comparison has been made for the kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged and shallow ones) under thermal treatments (TT) at 450...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118557 |
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| Zitieren: | Magnetic susceptibility of n- and p-Si single crystals containing thermodonors / V.М. Babich, M.M. Luchkevych, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 384-388. — Бібліогр.: 12 назв. — англ. |
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Babich, V.М. Luchkevych, M.M. Tsmots, V.M. 2017-05-30T16:11:51Z 2017-05-30T16:11:51Z 2010 Magnetic susceptibility of n- and p-Si single crystals containing thermodonors / V.М. Babich, M.M. Luchkevych, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 384-388. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 75.20.-g, 75.30.Cr, 75.40.Cx https://nasplib.isofts.kiev.ua/handle/123456789/118557 Using a series of experimental methods (Hall effect, electron paramagnetic resonance and magnetic susceptibility (MS, χ)) comparison has been made for the kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged and shallow ones) under thermal treatments (TT) at 450 °C with the kinetics of paramagnetic center accumulation in the samples obtained by the MS method. The absence of correlation between these dependences has been shown. The dependences χ(H) obtained both at 300 and 77 K that have orientation and paramagnetic component determine neither of these two kinds of TD-centers as it was in the case of 450 °C TT for p-Si(B) samples where the χ par component is determined by the concentration of deep TDs (Еі ≥ 0.2 еV). The χ(H) value in the n-Si(P) samples after TT at 450 °C is determined, evidently, by intermediate non-stable complexes, as well as by those formed during rapid cooling the samples en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Magnetic susceptibility of n- and p-Si single crystals containing thermodonors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| spellingShingle |
Magnetic susceptibility of n- and p-Si single crystals containing thermodonors Babich, V.М. Luchkevych, M.M. Tsmots, V.M. |
| title_short |
Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_full |
Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_fullStr |
Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_full_unstemmed |
Magnetic susceptibility of n- and p-Si single crystals containing thermodonors |
| title_sort |
magnetic susceptibility of n- and p-si single crystals containing thermodonors |
| author |
Babich, V.М. Luchkevych, M.M. Tsmots, V.M. |
| author_facet |
Babich, V.М. Luchkevych, M.M. Tsmots, V.M. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Using a series of experimental methods (Hall effect, electron paramagnetic
resonance and magnetic susceptibility (MS, χ)) comparison has been made for the
kinetics of formation inherent to different types of thermodonors (TDs) (doubly-charged
and shallow ones) under thermal treatments (TT) at 450 °C with the kinetics of
paramagnetic center accumulation in the samples obtained by the MS method. The
absence of correlation between these dependences has been shown. The dependences
χ(H) obtained both at 300 and 77 K that have orientation and paramagnetic component
determine neither of these two kinds of TD-centers as it was in the case of 450 °C TT for
p-Si(B) samples where the χ
par component is determined by the concentration of deep
TDs (Еі ≥ 0.2 еV). The χ(H) value in the n-Si(P) samples after TT at 450 °C is
determined, evidently, by intermediate non-stable complexes, as well as by those formed
during rapid cooling the samples
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118557 |
| citation_txt |
Magnetic susceptibility of n- and p-Si single crystals containing thermodonors / V.М. Babich, M.M. Luchkevych, V.M. Tsmots // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 384-388. — Бібліогр.: 12 назв. — англ. |
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| first_indexed |
2025-12-07T15:20:23Z |
| last_indexed |
2025-12-07T15:20:23Z |
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