Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment
The effect of HF and H₂O₂ vapor treatment on the spectral composition and
 intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures
 have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As
 a result of HF vapor treatmen...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118561 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Controlling the photoluminescence spectra
 of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862737047908777984 |
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| author | Dan’ko, V.A. Bratus, V.Ya. Indutnyi, I.Z. Lisovskyy, I.P. Zlobin, S.O. Michailovska, K.V. Shepeliavyi, P.E. |
| author_facet | Dan’ko, V.A. Bratus, V.Ya. Indutnyi, I.Z. Lisovskyy, I.P. Zlobin, S.O. Michailovska, K.V. Shepeliavyi, P.E. |
| citation_txt | Controlling the photoluminescence spectra
 of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effect of HF and H₂O₂ vapor treatment on the spectral composition and
intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures
have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As
a result of HF vapor treatment, considerable PL intensity growth and blueshift of PL
peak position are observed. It is suggested that the evolution of the PL spectra in HF
vapor-treated samples can be attributed to selective-etching-induced decrease in Si
nanoparticle dimensions and to passivation of Si dangling bonds (that are nonradiative
recombination trap states) by hydrogen and oxygen. Additional treatment in H₂O₂ vapor
results in additional nc-Si surface oxidation and reduction of nc-Si size. The possibility to
control the PL characteristics (peak position and intensity) of the porous nc-Si–SiOx
structures in a wide range by above treatments is shown.
|
| first_indexed | 2025-12-07T19:57:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118561 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:57:16Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Dan’ko, V.A. Bratus, V.Ya. Indutnyi, I.Z. Lisovskyy, I.P. Zlobin, S.O. Michailovska, K.V. Shepeliavyi, P.E. 2017-05-30T16:15:02Z 2017-05-30T16:15:02Z 2010 Controlling the photoluminescence spectra
 of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 78.55.Mb, 79.60.Jv, 81.40.Ef https://nasplib.isofts.kiev.ua/handle/123456789/118561 The effect of HF and H₂O₂ vapor treatment on the spectral composition and
 intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures
 have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As
 a result of HF vapor treatment, considerable PL intensity growth and blueshift of PL
 peak position are observed. It is suggested that the evolution of the PL spectra in HF
 vapor-treated samples can be attributed to selective-etching-induced decrease in Si
 nanoparticle dimensions and to passivation of Si dangling bonds (that are nonradiative
 recombination trap states) by hydrogen and oxygen. Additional treatment in H₂O₂ vapor
 results in additional nc-Si surface oxidation and reduction of nc-Si size. The possibility to
 control the PL characteristics (peak position and intensity) of the porous nc-Si–SiOx
 structures in a wide range by above treatments is shown. This work was partially supported by the project
 1.1.7/18 of the State Special Scientific-Technical
 Program on the development and creation of sensor
 science intensive products for 2008-2012. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment Article published earlier |
| spellingShingle | Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment Dan’ko, V.A. Bratus, V.Ya. Indutnyi, I.Z. Lisovskyy, I.P. Zlobin, S.O. Michailovska, K.V. Shepeliavyi, P.E. |
| title | Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment |
| title_full | Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment |
| title_fullStr | Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment |
| title_full_unstemmed | Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment |
| title_short | Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment |
| title_sort | controlling the photoluminescence spectra of porous nc-si–siox structures by vapor treatment |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118561 |
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