Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Dan’ko, V.A., Bratus, V.Ya., Indutnyi, I.Z., Lisovskyy, I.P., Zlobin, S.O., Michailovska, K.V., Shepeliavyi, P.E.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118561
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment / V.A. Dan’ko, V.Ya. Bratus’, I.Z. Indutnyi, I.P. Lisovskyy, S.O. Zlobin, K.V. Michailovska, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 413-417. — Бібліогр.: 22 назв. — англ.

The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) and PL measurements. As a result of HF vapor treatment, considerable PL inten...