Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca) in the subsurface layer is essentially (4...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2010 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118562 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields / L.P. Steblenko, A.N. Kurylyuk, O.V. Koplak, O.N. Krit, V.N. Tkach, S.N. Naumenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 389-392. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118562 |
|---|---|
| record_format |
dspace |
| spelling |
Steblenko, L.P. Kurylyuk, A.N. Koplak, O.V. Krit, O.N. Tkach, V.N. Naumenko, S.N. 2017-05-30T16:15:55Z 2017-05-30T16:15:55Z 2010 Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields / L.P. Steblenko, A.N. Kurylyuk, O.V. Koplak, O.N. Krit, V.N. Tkach, S.N. Naumenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 389-392. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 68.35.bg, 61.43.Dq, 61.72.Hh, 73.40.Qv https://nasplib.isofts.kiev.ua/handle/123456789/118562 Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca) in the subsurface layer is essentially (4 to 5 times) increased after magnetic impact. The carbon concentration is increased, too, while the concentration of oxygen (dominant impurity in silicon) is changed in various ways. Non-homogeneous distribution of impurities results in non-uniformity of heights for nano-objects that are formed from them, which leads to non-uniformity in micro-relief and causes a respective increase of the roughness parameter. The changes in impurity composition of silicon crystals, which are caused by the magnetic influence, correlate with changes in silicon micro-plastic characteristics. In this work, we found a positive magneto-plastic effect. Most probable, the reason for braking the dislocation motion in silicon crystals after magnetic treatment is diffusion of impurities along dislocation lines, which is enhanced by magnetic field. Coagulants of diffusing. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields |
| spellingShingle |
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields Steblenko, L.P. Kurylyuk, A.N. Koplak, O.V. Krit, O.N. Tkach, V.N. Naumenko, S.N. |
| title_short |
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields |
| title_full |
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields |
| title_fullStr |
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields |
| title_full_unstemmed |
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields |
| title_sort |
changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields |
| author |
Steblenko, L.P. Kurylyuk, A.N. Koplak, O.V. Krit, O.N. Tkach, V.N. Naumenko, S.N. |
| author_facet |
Steblenko, L.P. Kurylyuk, A.N. Koplak, O.V. Krit, O.N. Tkach, V.N. Naumenko, S.N. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Experimental data obtained in this work are indicative of the fact that magnetic
field stimulates processes of structural relaxation in silicon. Using the secondary-ion
mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca)
in the subsurface layer is essentially (4 to 5 times) increased after magnetic impact. The
carbon concentration is increased, too, while the concentration of oxygen (dominant
impurity in silicon) is changed in various ways. Non-homogeneous distribution of
impurities results in non-uniformity of heights for nano-objects that are formed from
them, which leads to non-uniformity in micro-relief and causes a respective increase of
the roughness parameter. The changes in impurity composition of silicon crystals, which
are caused by the magnetic influence, correlate with changes in silicon micro-plastic
characteristics. In this work, we found a positive magneto-plastic effect. Most probable,
the reason for braking the dislocation motion in silicon crystals after magnetic treatment
is diffusion of impurities along dislocation lines, which is enhanced by magnetic field.
Coagulants of diffusing.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118562 |
| citation_txt |
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields / L.P. Steblenko, A.N. Kurylyuk, O.V. Koplak, O.N. Krit, V.N. Tkach, S.N. Naumenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 389-392. — Бібліогр.: 8 назв. — англ. |
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2025-11-29T09:11:34Z |
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