Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields

Experimental data obtained in this work are indicative of the fact that magnetic
 field stimulates processes of structural relaxation in silicon. Using the secondary-ion
 mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca)
 in the subsurface...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2010
Main Authors: Steblenko, L.P., Kurylyuk, A.N., Koplak, O.V., Krit, O.N., Tkach, V.N., Naumenko, S.N.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118562
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Changes in nanostructure and micro-plastic properties
 of silicon crystals under action of magnetic fields / L.P. Steblenko, A.N. Kurylyuk, O.V. Koplak, O.N. Krit, V.N. Tkach, S.N. Naumenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 389-392. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Steblenko, L.P.
Kurylyuk, A.N.
Koplak, O.V.
Krit, O.N.
Tkach, V.N.
Naumenko, S.N.
author_facet Steblenko, L.P.
Kurylyuk, A.N.
Koplak, O.V.
Krit, O.N.
Tkach, V.N.
Naumenko, S.N.
citation_txt Changes in nanostructure and micro-plastic properties
 of silicon crystals under action of magnetic fields / L.P. Steblenko, A.N. Kurylyuk, O.V. Koplak, O.N. Krit, V.N. Tkach, S.N. Naumenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 389-392. — Бібліогр.: 8 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Experimental data obtained in this work are indicative of the fact that magnetic
 field stimulates processes of structural relaxation in silicon. Using the secondary-ion
 mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca)
 in the subsurface layer is essentially (4 to 5 times) increased after magnetic impact. The
 carbon concentration is increased, too, while the concentration of oxygen (dominant
 impurity in silicon) is changed in various ways. Non-homogeneous distribution of
 impurities results in non-uniformity of heights for nano-objects that are formed from
 them, which leads to non-uniformity in micro-relief and causes a respective increase of
 the roughness parameter. The changes in impurity composition of silicon crystals, which
 are caused by the magnetic influence, correlate with changes in silicon micro-plastic
 characteristics. In this work, we found a positive magneto-plastic effect. Most probable,
 the reason for braking the dislocation motion in silicon crystals after magnetic treatment
 is diffusion of impurities along dislocation lines, which is enhanced by magnetic field.
 Coagulants of diffusing.
first_indexed 2025-11-29T09:11:34Z
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language English
last_indexed 2025-11-29T09:11:34Z
publishDate 2010
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Steblenko, L.P.
Kurylyuk, A.N.
Koplak, O.V.
Krit, O.N.
Tkach, V.N.
Naumenko, S.N.
2017-05-30T16:15:55Z
2017-05-30T16:15:55Z
2010
Changes in nanostructure and micro-plastic properties
 of silicon crystals under action of magnetic fields / L.P. Steblenko, A.N. Kurylyuk, O.V. Koplak, O.N. Krit, V.N. Tkach, S.N. Naumenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 389-392. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS 68.35.bg, 61.43.Dq, 61.72.Hh, 73.40.Qv
https://nasplib.isofts.kiev.ua/handle/123456789/118562
Experimental data obtained in this work are indicative of the fact that magnetic
 field stimulates processes of structural relaxation in silicon. Using the secondary-ion
 mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca)
 in the subsurface layer is essentially (4 to 5 times) increased after magnetic impact. The
 carbon concentration is increased, too, while the concentration of oxygen (dominant
 impurity in silicon) is changed in various ways. Non-homogeneous distribution of
 impurities results in non-uniformity of heights for nano-objects that are formed from
 them, which leads to non-uniformity in micro-relief and causes a respective increase of
 the roughness parameter. The changes in impurity composition of silicon crystals, which
 are caused by the magnetic influence, correlate with changes in silicon micro-plastic
 characteristics. In this work, we found a positive magneto-plastic effect. Most probable,
 the reason for braking the dislocation motion in silicon crystals after magnetic treatment
 is diffusion of impurities along dislocation lines, which is enhanced by magnetic field.
 Coagulants of diffusing.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
Article
published earlier
spellingShingle Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
Steblenko, L.P.
Kurylyuk, A.N.
Koplak, O.V.
Krit, O.N.
Tkach, V.N.
Naumenko, S.N.
title Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
title_full Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
title_fullStr Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
title_full_unstemmed Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
title_short Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
title_sort changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
url https://nasplib.isofts.kiev.ua/handle/123456789/118562
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AT kurylyukan changesinnanostructureandmicroplasticpropertiesofsiliconcrystalsunderactionofmagneticfields
AT koplakov changesinnanostructureandmicroplasticpropertiesofsiliconcrystalsunderactionofmagneticfields
AT kriton changesinnanostructureandmicroplasticpropertiesofsiliconcrystalsunderactionofmagneticfields
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