Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields
Experimental data obtained in this work are indicative of the fact that magnetic field stimulates processes of structural relaxation in silicon. Using the secondary-ion mass-spectrometry method, we found that the concentration of alkali metals (K, Na, Ca) in the subsurface layer is essentially (4...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2010 |
| Hauptverfasser: | Steblenko, L.P., Kurylyuk, A.N., Koplak, O.V., Krit, O.N., Tkach, V.N., Naumenko, S.N. |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118562 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Changes in nanostructure and micro-plastic properties of silicon crystals under action of magnetic fields / L.P. Steblenko, A.N. Kurylyuk, O.V. Koplak, O.N. Krit, V.N. Tkach, S.N. Naumenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 389-392. — Бібліогр.: 8 назв. — англ. |
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