Complex destruction of near-surface silicon layers of Si-SiO₂ structure
The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. The magnitude of mechanical stresses depends not only on parameters of silicon dioxide and silicon but on presence of...
Збережено в:
| Дата: | 2010 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118578 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
was observed the complex destruction of these layers caused by relaxation of mechanical
stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
dioxide and silicon but on presence of initial defects in silicon. We have proposed the
defect formation mechanism of near-surface layers in Si-SiO₂ structure, and it has been
revealed the influence of impurities on this process. |
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