Complex destruction of near-surface silicon layers of Si-SiO₂ structure
The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
 was observed the complex destruction of these layers caused by relaxation of mechanical
 stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
 dioxide and si...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118578 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
was observed the complex destruction of these layers caused by relaxation of mechanical
stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
dioxide and silicon but on presence of initial defects in silicon. We have proposed the
defect formation mechanism of near-surface layers in Si-SiO₂ structure, and it has been
revealed the influence of impurities on this process.
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| ISSN: | 1560-8034 |