Complex destruction of near-surface silicon layers of Si-SiO₂ structure

The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
 was observed the complex destruction of these layers caused by relaxation of mechanical
 stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
 dioxide and si...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2010
Hauptverfasser: Yatsunskiy, I.R., Kulinich, O.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118578
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Yatsunskiy, I.R.
Kulinich, O.A.
author_facet Yatsunskiy, I.R.
Kulinich, O.A.
citation_txt Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
 was observed the complex destruction of these layers caused by relaxation of mechanical
 stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
 dioxide and silicon but on presence of initial defects in silicon. We have proposed the
 defect formation mechanism of near-surface layers in Si-SiO₂ structure, and it has been
 revealed the influence of impurities on this process.
first_indexed 2025-11-25T21:02:31Z
format Article
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id nasplib_isofts_kiev_ua-123456789-118578
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-25T21:02:31Z
publishDate 2010
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Yatsunskiy, I.R.
Kulinich, O.A.
2017-05-30T16:31:53Z
2017-05-30T16:31:53Z
2010
Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS 61.05.cm, 61.72.Cc, 68.35.bg
https://nasplib.isofts.kiev.ua/handle/123456789/118578
The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
 was observed the complex destruction of these layers caused by relaxation of mechanical
 stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
 dioxide and silicon but on presence of initial defects in silicon. We have proposed the
 defect formation mechanism of near-surface layers in Si-SiO₂ structure, and it has been
 revealed the influence of impurities on this process.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Complex destruction of near-surface silicon layers of Si-SiO₂ structure
Article
published earlier
spellingShingle Complex destruction of near-surface silicon layers of Si-SiO₂ structure
Yatsunskiy, I.R.
Kulinich, O.A.
title Complex destruction of near-surface silicon layers of Si-SiO₂ structure
title_full Complex destruction of near-surface silicon layers of Si-SiO₂ structure
title_fullStr Complex destruction of near-surface silicon layers of Si-SiO₂ structure
title_full_unstemmed Complex destruction of near-surface silicon layers of Si-SiO₂ structure
title_short Complex destruction of near-surface silicon layers of Si-SiO₂ structure
title_sort complex destruction of near-surface silicon layers of si-sio₂ structure
url https://nasplib.isofts.kiev.ua/handle/123456789/118578
work_keys_str_mv AT yatsunskiyir complexdestructionofnearsurfacesiliconlayersofsisio2structure
AT kulinichoa complexdestructionofnearsurfacesiliconlayersofsisio2structure