Complex destruction of near-surface silicon layers of Si-SiO₂ structure

The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
 was observed the complex destruction of these layers caused by relaxation of mechanical
 stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
 dioxide and si...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2010
Hauptverfasser: Yatsunskiy, I.R., Kulinich, O.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118578
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ.

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