Complex destruction of near-surface silicon layers of Si-SiO₂ structure

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2010
• Main Authors: Yatsunskiy, I.R., Kulinich, O.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118578
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ.

The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It
 was observed the complex destruction of these layers caused by relaxation of mechanical
 stresses. The magnitude of mechanical stresses depends not only on parameters of silicon
 dioxide and si...