Complex destruction of near-surface silicon layers of Si-SiO₂ structure

• Datum: 2010
• Hauptverfasser: Yatsunskiy, I.R., Kulinich, O.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118578
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ.

The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. The magnitude of mechanical stresses depends not only on parameters of silicon dioxide and silicon but on presence of...