Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2010
• Hauptverfasser: Shukla, S., Kumar, S.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118579
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ.

Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by
 conventional rapid melt-quenching technique. The nature of the alloys was ascertained
 through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials
 could be prepared over the glass substrate by thermal evaporation technique. Vacuum
 evaporated indium electrodes were used here to perform electrical measurements.
 Coplanar structure of thin films was used in this case. The dc electrical conductivity
 measurements have been carried out. The dark conductivity, pre-exponential factor and
 activation energy have been calculated for various compositions. It has been found that
 the dark conductivity and pre-exponential factor increase, while the activation energy
 decreases with Sb concentration in Ge₄₀Te₆₀-xSbx system. The results can be reserved
 as an evidence for the chalcogenide nature defects in the above material.