Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys
Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials could be prepared over the glass substrate by t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2010 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118579 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. |
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Shukla, S. Kumar, S. 2017-05-30T16:33:05Z 2017-05-30T16:33:05Z 2010 Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.43.Dq, 63.50.Lm, 72.15.Cz https://nasplib.isofts.kiev.ua/handle/123456789/118579 Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials could be prepared over the glass substrate by thermal evaporation technique. Vacuum evaporated indium electrodes were used here to perform electrical measurements. Coplanar structure of thin films was used in this case. The dc electrical conductivity measurements have been carried out. The dark conductivity, pre-exponential factor and activation energy have been calculated for various compositions. It has been found that the dark conductivity and pre-exponential factor increase, while the activation energy decreases with Sb concentration in Ge₄₀Te₆₀-xSbx system. The results can be reserved as an evidence for the chalcogenide nature defects in the above material. We are very much grateful to DST, New Delhi for providing us with financial support as a major research project during the span of this work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| spellingShingle |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys Shukla, S. Kumar, S. |
| title_short |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_full |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_fullStr |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_full_unstemmed |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_sort |
electrical transport in thin films of glassy ge₄₀te₆₀-xsbx alloys |
| author |
Shukla, S. Kumar, S. |
| author_facet |
Shukla, S. Kumar, S. |
| publishDate |
2010 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by
conventional rapid melt-quenching technique. The nature of the alloys was ascertained
through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials
could be prepared over the glass substrate by thermal evaporation technique. Vacuum
evaporated indium electrodes were used here to perform electrical measurements.
Coplanar structure of thin films was used in this case. The dc electrical conductivity
measurements have been carried out. The dark conductivity, pre-exponential factor and
activation energy have been calculated for various compositions. It has been found that
the dark conductivity and pre-exponential factor increase, while the activation energy
decreases with Sb concentration in Ge₄₀Te₆₀-xSbx system. The results can be reserved
as an evidence for the chalcogenide nature defects in the above material.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118579 |
| citation_txt |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. |
| work_keys_str_mv |
AT shuklas electricaltransportinthinfilmsofglassyge40te60xsbxalloys AT kumars electricaltransportinthinfilmsofglassyge40te60xsbxalloys |
| first_indexed |
2025-12-07T15:29:27Z |
| last_indexed |
2025-12-07T15:29:27Z |
| _version_ |
1850863902747787264 |