Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys
Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by
 conventional rapid melt-quenching technique. The nature of the alloys was ascertained
 through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials
 could be prepared over...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2010 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118579 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862669729404026880 |
|---|---|
| author | Shukla, S. Kumar, S. |
| author_facet | Shukla, S. Kumar, S. |
| citation_txt | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by
conventional rapid melt-quenching technique. The nature of the alloys was ascertained
through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials
could be prepared over the glass substrate by thermal evaporation technique. Vacuum
evaporated indium electrodes were used here to perform electrical measurements.
Coplanar structure of thin films was used in this case. The dc electrical conductivity
measurements have been carried out. The dark conductivity, pre-exponential factor and
activation energy have been calculated for various compositions. It has been found that
the dark conductivity and pre-exponential factor increase, while the activation energy
decreases with Sb concentration in Ge₄₀Te₆₀-xSbx system. The results can be reserved
as an evidence for the chalcogenide nature defects in the above material.
|
| first_indexed | 2025-12-07T15:29:27Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118579 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:29:27Z |
| publishDate | 2010 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shukla, S. Kumar, S. 2017-05-30T16:33:05Z 2017-05-30T16:33:05Z 2010 Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.43.Dq, 63.50.Lm, 72.15.Cz https://nasplib.isofts.kiev.ua/handle/123456789/118579 Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by
 conventional rapid melt-quenching technique. The nature of the alloys was ascertained
 through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials
 could be prepared over the glass substrate by thermal evaporation technique. Vacuum
 evaporated indium electrodes were used here to perform electrical measurements.
 Coplanar structure of thin films was used in this case. The dc electrical conductivity
 measurements have been carried out. The dark conductivity, pre-exponential factor and
 activation energy have been calculated for various compositions. It has been found that
 the dark conductivity and pre-exponential factor increase, while the activation energy
 decreases with Sb concentration in Ge₄₀Te₆₀-xSbx system. The results can be reserved
 as an evidence for the chalcogenide nature defects in the above material. We are very much grateful to DST, New Delhi for
 providing us with financial support as a major research
 project during the span of this work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys Article published earlier |
| spellingShingle | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys Shukla, S. Kumar, S. |
| title | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_full | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_fullStr | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_full_unstemmed | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_short | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_sort | electrical transport in thin films of glassy ge₄₀te₆₀-xsbx alloys |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118579 |
| work_keys_str_mv | AT shuklas electricaltransportinthinfilmsofglassyge40te60xsbxalloys AT kumars electricaltransportinthinfilmsofglassyge40te60xsbxalloys |