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Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys

Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by
 conventional rapid melt-quenching technique. The nature of the alloys was ascertained
 through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials
 could be prepared over...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2010
Main Authors: Shukla, S., Kumar, S.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/118579
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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