Selective unequal-thickness thin-film filters for IR spectral region
A new five-layer structure of the dielectric interference filter for the infra-red
 region of spectrum is investigated. The main spectral parameters of such a narrow-band
 filter are determined. The dependence of the transmission band half-width on the
 thickness of a dividin...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2008 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118585 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Selective unequal-thickness thin-film filters for IR spectral region / I.Ya. Yaremchuk, V.M. Fitio, Ya.V. Bobitski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 23-25. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | A new five-layer structure of the dielectric interference filter for the infra-red
region of spectrum is investigated. The main spectral parameters of such a narrow-band
filter are determined. The dependence of the transmission band half-width on the
thickness of a dividing layer in this system is investigated. It is shown that, in the case of
the application of PbTe, GeTe, and SnTe layers with a given thickness; their number can
be limited to five at providing the necessary selectivity of the filter: practically the 100-%
transmission at the resonance frequency and 0.005 % outside the transmission band.
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| ISSN: | 1560-8034 |