Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2008
• Автори: Sachenko, A.V., Sokolovskyi, I.O.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118590
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base / A.V. Sachenko, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 1-5. — Бібліогр.: 7 назв. — англ.

Analytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of QWSCs with the A₃B₅ p-i-n structure is rather low because of a low photovoltage value. To improve this situation, the base region should be doped heavily enough. Light concentration makes it possible to realize high photoconversion efficiencies for A₃B₅ quantum-well p-i-n structures with a low background level of the base region doping. Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with rather high base region doping levels.