Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Sachenko, A.V., Sokolovskyi, I.O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118590
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base / A.V. Sachenko, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 1-5. — Бібліогр.: 7 назв. — англ.

Analytical expressions for the maximum obtainable photoconversion
 efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The
 modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using
 the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of
 QWSCs with the A₃B₅ p-i-n structure is rather low because of a low photovoltage value.
 To improve this situation, the base region should be doped heavily enough. Light
 concentration makes it possible to realize high photoconversion efficiencies for A₃B₅
 quantum-well p-i-n structures with a low background level of the base region doping.
 Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with
 rather high base region doping levels.