Using ellipsometry methods for depth analyzing the optical disc data layer relief structures
We studied the relief depth of the data layer formed in a glass disk by ion beam
 etching process with using classical ellipsometry at the constant wavelength 632.8 nm for
 different angles of incidence. It was found that for 0° and 90° azimuth angles, a pair of
 ellipsometri...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118596 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Using ellipsometry methods for depth analyzing the optical disc data layer relief structures / V.G. Kravets, I.V. Gorbov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 11-15. — Бібліогр.: 8 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | We studied the relief depth of the data layer formed in a glass disk by ion beam
etching process with using classical ellipsometry at the constant wavelength 632.8 nm for
different angles of incidence. It was found that for 0° and 90° azimuth angles, a pair of
ellipsometric parameters Ψ and ∆ is sufficient to characterize the changes in light
reflection for various structure depths. The depth of optical disc data layer relief
structures was estimated via experimental dependences of ellipsometric parameters. The
estimated data layer depths were found to be in good agreement with independent
tunnelling electron microscopy measurements.
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| ISSN: | 1560-8034 |