Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2009
• Автори: Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118612
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ.

In this paper, we explore the electrophysical and electroluminescence (EL)
 properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
 and C⁺
 ions. The implanting fluencies were chosen in such a way that the peak concentration of
 excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on
 electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined
 measurements of charge trapping and EL intensity as a function of the injected charge
 and current have been carried out with the aim of clarifying the mechanisms of
 electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections
 of both electron traps and hole traps were determined. EL quenching at great levels of
 injected charge is associated with strong negative charge capture, following capture of
 positive charge leading to electrical breakdown of SiO₂ structures.