Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effe...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2009
Автори: Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118612
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118612
record_format dspace
spelling Nazarov, A.N.
Osiyuk, I.N.
Tiagulskyi, S.I.
Lysenko, V.S.
Tyagulskyy, I.P.
Torbin, V.N.
Omelchuk, V.V.
Nazarova, T.M.
Rebohle, L.
Skorupa, W.
2017-05-30T17:23:36Z
2017-05-30T17:23:36Z
2009
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ.
1560-8034
PACS 68.35,78.55
https://nasplib.isofts.kiev.ua/handle/123456789/118612
In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections of both electron traps and hole traps were determined. EL quenching at great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
spellingShingle Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
Nazarov, A.N.
Osiyuk, I.N.
Tiagulskyi, S.I.
Lysenko, V.S.
Tyagulskyy, I.P.
Torbin, V.N.
Omelchuk, V.V.
Nazarova, T.M.
Rebohle, L.
Skorupa, W.
title_short Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_full Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_fullStr Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_full_unstemmed Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
title_sort erratum: electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
author Nazarov, A.N.
Osiyuk, I.N.
Tiagulskyi, S.I.
Lysenko, V.S.
Tyagulskyy, I.P.
Torbin, V.N.
Omelchuk, V.V.
Nazarova, T.M.
Rebohle, L.
Skorupa, W.
author_facet Nazarov, A.N.
Osiyuk, I.N.
Tiagulskyi, S.I.
Lysenko, V.S.
Tyagulskyy, I.P.
Torbin, V.N.
Omelchuk, V.V.
Nazarova, T.M.
Rebohle, L.
Skorupa, W.
publishDate 2009
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections of both electron traps and hole traps were determined. EL quenching at great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118612
citation_txt Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ.
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first_indexed 2025-12-07T18:58:36Z
last_indexed 2025-12-07T18:58:36Z
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