Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
In this paper, we explore the electrophysical and electroluminescence (EL)
 properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
 and C⁺
 ions. The implanting fluencies were chosen in such a way that the peak concentration of
 excess Si and C...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2009 |
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118612 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862726529009582080 |
|---|---|
| author | Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. |
| author_facet | Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. |
| citation_txt | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this paper, we explore the electrophysical and electroluminescence (EL)
properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
and C⁺
ions. The implanting fluencies were chosen in such a way that the peak concentration of
excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on
electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined
measurements of charge trapping and EL intensity as a function of the injected charge
and current have been carried out with the aim of clarifying the mechanisms of
electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections
of both electron traps and hole traps were determined. EL quenching at great levels of
injected charge is associated with strong negative charge capture, following capture of
positive charge leading to electrical breakdown of SiO₂ structures.
|
| first_indexed | 2025-12-07T18:58:36Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118612 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:58:36Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. 2017-05-30T17:23:36Z 2017-05-30T17:23:36Z 2009 Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 68.35,78.55 https://nasplib.isofts.kiev.ua/handle/123456789/118612 In this paper, we explore the electrophysical and electroluminescence (EL)
 properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
 and C⁺
 ions. The implanting fluencies were chosen in such a way that the peak concentration of
 excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on
 electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined
 measurements of charge trapping and EL intensity as a function of the injected charge
 and current have been carried out with the aim of clarifying the mechanisms of
 electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections
 of both electron traps and hole traps were determined. EL quenching at great levels of
 injected charge is associated with strong negative charge capture, following capture of
 positive charge leading to electrical breakdown of SiO₂ structures. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions Article published earlier |
| spellingShingle | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. |
| title | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_full | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_fullStr | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_full_unstemmed | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_short | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_sort | erratum: electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118612 |
| work_keys_str_mv | AT nazarovan erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT osiyukin erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT tiagulskyisi erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT lysenkovs erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT tyagulskyyip erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT torbinvn erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT omelchukvv erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT nazarovatm erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT rebohlel erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions AT skorupaw erratumelectricalandlightemittingpropertiesofsilicondioxidecoimplantedbycarbonandsiliconions |