Electrical properties of fast cooled InSe single crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2008
• Main Authors: Zaslonkin, A.V., Kovalyuk, Z.D., Mintyanskii, I.V., Savitskii, P.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118664
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ.

Influence of fast cooling on electrical properties of n-InSe single crystals is
 investigated for an ingot grown by the Bridgman method. Electrical characteristics and
 their anisotropy are investigated in the temperature range 80 to 410 K. It is found that
 fast cooling, as soon as crystallization is completed, of the ingot leads to an increase of
 the free electron concentration, conductivity along layers, and conductivity anisotropy, as
 well as to a decrease of the Hall mobility of carriers along layers. The theoretical analysis
 of the mobility of carriers has shown that space-charge regions underlie the effective
 mechanism of their scattering.