Electrical properties of fast cooled InSe single crystals
Influence of fast cooling on electrical properties of n-InSe single crystals is
 investigated for an ingot grown by the Bridgman method. Electrical characteristics and
 their anisotropy are investigated in the temperature range 80 to 410 K. It is found that
 fast cooling, as...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2008 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118664 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862719907013066752 |
|---|---|
| author | Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. |
| author_facet | Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. |
| citation_txt | Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Influence of fast cooling on electrical properties of n-InSe single crystals is
investigated for an ingot grown by the Bridgman method. Electrical characteristics and
their anisotropy are investigated in the temperature range 80 to 410 K. It is found that
fast cooling, as soon as crystallization is completed, of the ingot leads to an increase of
the free electron concentration, conductivity along layers, and conductivity anisotropy, as
well as to a decrease of the Hall mobility of carriers along layers. The theoretical analysis
of the mobility of carriers has shown that space-charge regions underlie the effective
mechanism of their scattering.
|
| first_indexed | 2025-12-07T18:23:17Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118664 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:23:17Z |
| publishDate | 2008 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. 2017-05-30T19:12:29Z 2017-05-30T19:12:29Z 2008 Electrical properties of fast cooled InSe single crystals / A.V. Zaslonkin, Z.D. Kovalyuk, I.V. Mintyanskii, P.I. Savitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 54-58. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 72.20.Dp, 72.20.-i, 81.10.Fq https://nasplib.isofts.kiev.ua/handle/123456789/118664 Influence of fast cooling on electrical properties of n-InSe single crystals is
 investigated for an ingot grown by the Bridgman method. Electrical characteristics and
 their anisotropy are investigated in the temperature range 80 to 410 K. It is found that
 fast cooling, as soon as crystallization is completed, of the ingot leads to an increase of
 the free electron concentration, conductivity along layers, and conductivity anisotropy, as
 well as to a decrease of the Hall mobility of carriers along layers. The theoretical analysis
 of the mobility of carriers has shown that space-charge regions underlie the effective
 mechanism of their scattering. This work was supported by the Science and Technology
 Center of Ukraine (grant No. 3237). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electrical properties of fast cooled InSe single crystals Article published earlier |
| spellingShingle | Electrical properties of fast cooled InSe single crystals Zaslonkin, A.V. Kovalyuk, Z.D. Mintyanskii, I.V. Savitskii, P.I. |
| title | Electrical properties of fast cooled InSe single crystals |
| title_full | Electrical properties of fast cooled InSe single crystals |
| title_fullStr | Electrical properties of fast cooled InSe single crystals |
| title_full_unstemmed | Electrical properties of fast cooled InSe single crystals |
| title_short | Electrical properties of fast cooled InSe single crystals |
| title_sort | electrical properties of fast cooled inse single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118664 |
| work_keys_str_mv | AT zaslonkinav electricalpropertiesoffastcooledinsesinglecrystals AT kovalyukzd electricalpropertiesoffastcooledinsesinglecrystals AT mintyanskiiiv electricalpropertiesoffastcooledinsesinglecrystals AT savitskiipi electricalpropertiesoffastcooledinsesinglecrystals |