Self-purification effect in CdTe:Gd crystals
The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concent...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2008 |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Zitieren: | Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ. |
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Nikonyuk, E.S. Shlyakhovyi, V.L. Kovalets, M.O. Kuchma, M.I. Zakharuk, Z.I. Savchuk, A.I. Yuriychuk, I.M. 2017-05-30T19:13:32Z 2017-05-30T19:13:32Z 2008 Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 61.72.Vv, 71.55.-i https://nasplib.isofts.kiev.ua/handle/123456789/118666 The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concentration in the melt: n-conductivity at 5.10¹⁷ – 3.10¹⁸ cm⁻³ and p-conductivity at 3.10¹⁸ – 10¹⁹ cm⁻³. The concentrations and ionization energies of A₁ (EA₁ = 0.05 eV) and A₂ (EA₂ = 0.12-0.15 eV) acceptors are determined from the temperature dependences of the Hall coefficient and the mobility of carriers. A long-term thermal treatment of gadolinium-doped p-CdTe crystals in the range 663 – 713 K is accompanied by the “self-purification” of the material from A₂- acceptors and compensating donors. The Gd impurity at C₀ > 3.10¹⁸ cm⁻³ is shown to bring no new electrical active centers into the CdTe lattice, by reducing, at the same time, the background of residual impurities. It is suggested that Te precipitates and Te inclusions serve as sinks for the above defects. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Self-purification effect in CdTe:Gd crystals Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Self-purification effect in CdTe:Gd crystals |
| spellingShingle |
Self-purification effect in CdTe:Gd crystals Nikonyuk, E.S. Shlyakhovyi, V.L. Kovalets, M.O. Kuchma, M.I. Zakharuk, Z.I. Savchuk, A.I. Yuriychuk, I.M. |
| title_short |
Self-purification effect in CdTe:Gd crystals |
| title_full |
Self-purification effect in CdTe:Gd crystals |
| title_fullStr |
Self-purification effect in CdTe:Gd crystals |
| title_full_unstemmed |
Self-purification effect in CdTe:Gd crystals |
| title_sort |
self-purification effect in cdte:gd crystals |
| author |
Nikonyuk, E.S. Shlyakhovyi, V.L. Kovalets, M.O. Kuchma, M.I. Zakharuk, Z.I. Savchuk, A.I. Yuriychuk, I.M. |
| author_facet |
Nikonyuk, E.S. Shlyakhovyi, V.L. Kovalets, M.O. Kuchma, M.I. Zakharuk, Z.I. Savchuk, A.I. Yuriychuk, I.M. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The temperature dependences (T = 80 – 420 K) of the concentration of charge
carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by
the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd
crystals changes with increase in the impurity concentration in the melt: n-conductivity at
5.10¹⁷ – 3.10¹⁸ cm⁻³ and p-conductivity at 3.10¹⁸ – 10¹⁹ cm⁻³. The concentrations and
ionization energies of A₁ (EA₁ = 0.05 eV) and A₂ (EA₂ = 0.12-0.15 eV) acceptors are
determined from the temperature dependences of the Hall coefficient and the mobility of
carriers. A long-term thermal treatment of gadolinium-doped p-CdTe crystals in the
range 663 – 713 K is accompanied by the “self-purification” of the material from A₂-
acceptors and compensating donors. The Gd impurity at C₀ > 3.10¹⁸ cm⁻³ is shown to
bring no new electrical active centers into the CdTe lattice, by reducing, at the same time,
the background of residual impurities. It is suggested that Te precipitates and Te inclusions
serve as sinks for the above defects.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118666 |
| fulltext |
|
| citation_txt |
Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ. |
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| first_indexed |
2025-11-26T14:23:41Z |
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2025-11-26T14:23:41Z |
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