Self-purification effect in CdTe:Gd crystals

The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concent...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2008
Hauptverfasser: Nikonyuk, E.S., Shlyakhovyi, V.L., Kovalets, M.O., Kuchma, M.I., Zakharuk, Z.I., Savchuk, A.I., Yuriychuk, I.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118666
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Zitieren:Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118666
record_format dspace
spelling Nikonyuk, E.S.
Shlyakhovyi, V.L.
Kovalets, M.O.
Kuchma, M.I.
Zakharuk, Z.I.
Savchuk, A.I.
Yuriychuk, I.M.
2017-05-30T19:13:32Z
2017-05-30T19:13:32Z
2008
Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 61.72.Vv, 71.55.-i
https://nasplib.isofts.kiev.ua/handle/123456789/118666
The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concentration in the melt: n-conductivity at 5.10¹⁷ – 3.10¹⁸ cm⁻³ and p-conductivity at 3.10¹⁸ – 10¹⁹ cm⁻³. The concentrations and ionization energies of A₁ (EA₁ = 0.05 eV) and A₂ (EA₂ = 0.12-0.15 eV) acceptors are determined from the temperature dependences of the Hall coefficient and the mobility of carriers. A long-term thermal treatment of gadolinium-doped p-CdTe crystals in the range 663 – 713 K is accompanied by the “self-purification” of the material from A₂- acceptors and compensating donors. The Gd impurity at C₀ > 3.10¹⁸ cm⁻³ is shown to bring no new electrical active centers into the CdTe lattice, by reducing, at the same time, the background of residual impurities. It is suggested that Te precipitates and Te inclusions serve as sinks for the above defects.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Self-purification effect in CdTe:Gd crystals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Self-purification effect in CdTe:Gd crystals
spellingShingle Self-purification effect in CdTe:Gd crystals
Nikonyuk, E.S.
Shlyakhovyi, V.L.
Kovalets, M.O.
Kuchma, M.I.
Zakharuk, Z.I.
Savchuk, A.I.
Yuriychuk, I.M.
title_short Self-purification effect in CdTe:Gd crystals
title_full Self-purification effect in CdTe:Gd crystals
title_fullStr Self-purification effect in CdTe:Gd crystals
title_full_unstemmed Self-purification effect in CdTe:Gd crystals
title_sort self-purification effect in cdte:gd crystals
author Nikonyuk, E.S.
Shlyakhovyi, V.L.
Kovalets, M.O.
Kuchma, M.I.
Zakharuk, Z.I.
Savchuk, A.I.
Yuriychuk, I.M.
author_facet Nikonyuk, E.S.
Shlyakhovyi, V.L.
Kovalets, M.O.
Kuchma, M.I.
Zakharuk, Z.I.
Savchuk, A.I.
Yuriychuk, I.M.
publishDate 2008
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concentration in the melt: n-conductivity at 5.10¹⁷ – 3.10¹⁸ cm⁻³ and p-conductivity at 3.10¹⁸ – 10¹⁹ cm⁻³. The concentrations and ionization energies of A₁ (EA₁ = 0.05 eV) and A₂ (EA₂ = 0.12-0.15 eV) acceptors are determined from the temperature dependences of the Hall coefficient and the mobility of carriers. A long-term thermal treatment of gadolinium-doped p-CdTe crystals in the range 663 – 713 K is accompanied by the “self-purification” of the material from A₂- acceptors and compensating donors. The Gd impurity at C₀ > 3.10¹⁸ cm⁻³ is shown to bring no new electrical active centers into the CdTe lattice, by reducing, at the same time, the background of residual impurities. It is suggested that Te precipitates and Te inclusions serve as sinks for the above defects.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118666
fulltext
citation_txt Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ.
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