Self-purification effect in CdTe:Gd crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2008
• Hauptverfasser: Nikonyuk, E.S., Shlyakhovyi, V.L., Kovalets, M.O., Kuchma, M.I., Zakharuk, Z.I., Savchuk, A.I., Yuriychuk, I.M.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118666
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ.

The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concent...