Self-purification effect in CdTe:Gd crystals
The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the conductivity type of CdTe:Gd crystals changes with increase in the impurity concent...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2008 |
| Main Authors: | Nikonyuk, E.S., Shlyakhovyi, V.L., Kovalets, M.O., Kuchma, M.I., Zakharuk, Z.I., Savchuk, A.I., Yuriychuk, I.M. |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118666 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Self-purification effect in CdTe:Gd crystals / E.S. Nikonyuk, V.L.Shlyakhovyi, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, A.I. Savchuk, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 40-42. — Бібліогр.: 7 назв. — англ. |
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