Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate
 using a simple model. We have obtained the expressions for static conductance and thermopower of the
 epitaxial graphene. The thermopower of the epitaxial graphene can be...
Gespeichert in:
| Veröffentlicht in: | Физика низких температур |
|---|---|
| Datum: | 2013 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
|
| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118667 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Thermoelectric effect in single layer epitaxial graphene
 formed on semiconductor substrate.
 Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862738129331421184 |
|---|---|
| author | Alisultanov, Z.Z. |
| author_facet | Alisultanov, Z.Z. |
| citation_txt | Thermoelectric effect in single layer epitaxial graphene
 formed on semiconductor substrate.
 Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. |
| collection | DSpace DC |
| container_title | Физика низких температур |
| description | In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate
using a simple model. We have obtained the expressions for static conductance and thermopower of the
epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the
semiconductor band gap.
|
| first_indexed | 2025-12-07T20:03:13Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118667 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 0132-6414 |
| language | English |
| last_indexed | 2025-12-07T20:03:13Z |
| publishDate | 2013 |
| publisher | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| record_format | dspace |
| spelling | Alisultanov, Z.Z. 2017-05-30T19:14:45Z 2017-05-30T19:14:45Z 2013 Thermoelectric effect in single layer epitaxial graphene
 formed on semiconductor substrate.
 Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. 0132-6414 PACS: 68.43.–h, 72.80.Vp, 65.80.Ck https://nasplib.isofts.kiev.ua/handle/123456789/118667 In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate
 using a simple model. We have obtained the expressions for static conductance and thermopower of the
 epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the
 semiconductor band gap. Author thanks the Federal Lezghin National and Cultural
 Autonomy (FLNCA) for the support and A.A. Varlamov
 for useful discussion. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Электронные свойства проводящих систем Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model Article published earlier |
| spellingShingle | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model Alisultanov, Z.Z. Электронные свойства проводящих систем |
| title | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_full | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_fullStr | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_full_unstemmed | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_short | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_sort | thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. simple analytical model |
| topic | Электронные свойства проводящих систем |
| topic_facet | Электронные свойства проводящих систем |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118667 |
| work_keys_str_mv | AT alisultanovzz thermoelectriceffectinsinglelayerepitaxialgrapheneformedonsemiconductorsubstratesimpleanalyticalmodel |