Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large...
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| Published in: | Физика низких температур |
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| Date: | 2013 |
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| Format: | Article |
| Language: | English |
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Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118667 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Alisultanov, Z.Z. 2017-05-30T19:14:45Z 2017-05-30T19:14:45Z 2013 Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. 0132-6414 PACS: 68.43.–h, 72.80.Vp, 65.80.Ck https://nasplib.isofts.kiev.ua/handle/123456789/118667 In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap. Author thanks the Federal Lezghin National and Cultural Autonomy (FLNCA) for the support and A.A. Varlamov for useful discussion. en Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України Физика низких температур Электронные свойства проводящих систем Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| spellingShingle |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model Alisultanov, Z.Z. Электронные свойства проводящих систем |
| title_short |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_full |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_fullStr |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_full_unstemmed |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_sort |
thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. simple analytical model |
| author |
Alisultanov, Z.Z. |
| author_facet |
Alisultanov, Z.Z. |
| topic |
Электронные свойства проводящих систем |
| topic_facet |
Электронные свойства проводящих систем |
| publishDate |
2013 |
| language |
English |
| container_title |
Физика низких температур |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| format |
Article |
| description |
In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate
using a simple model. We have obtained the expressions for static conductance and thermopower of the
epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the
semiconductor band gap.
|
| issn |
0132-6414 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118667 |
| citation_txt |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. |
| work_keys_str_mv |
AT alisultanovzz thermoelectriceffectinsinglelayerepitaxialgrapheneformedonsemiconductorsubstratesimpleanalyticalmodel |
| first_indexed |
2025-12-07T20:03:13Z |
| last_indexed |
2025-12-07T20:03:13Z |
| _version_ |
1850881126566985728 |