High-frequency properties of systems with drifting electrons and polar optical phonons

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2008
• Автор: Kukhtaruk, S.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/118668
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ.

An analysis of interaction between drifting electrons and optical phonons in
 semiconductors is presented. Three physical systems are studied: three-dimensional
 electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a
 quantum well, and two-dimensional electron gas in a quantum well under a metal
 electrode. The Euler and Poisson equations are used for studying the electron subsystem.
 Interaction between electrons and polar optical phonons are taken into consideration
 using a frequency dependence of the dielectric permittivity. As a result, the dispersion
 equations that describe self-consistent collective oscillations of plasmons and optical
 phonons are deduced. We found that interaction between electrons and optical phonons
 leads to instability of the electron subsystem. The considered physical systems are
 capable to be used as a generator or amplifier of the electromagnetic radiation in the 10
 THz frequency range. The effect of instability is suppressed if damping of optical
 phonons and plasma oscillations is essentially strong.