High-frequency properties of systems with drifting electrons and polar optical phonons

An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2008
1. Verfasser: Kukhtaruk, S.M.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/118668
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-118668
record_format dspace
spelling Kukhtaruk, S.M.
2017-05-30T19:15:00Z
2017-05-30T19:15:00Z
2008
High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS 71.38.-k
https://nasplib.isofts.kiev.ua/handle/123456789/118668
An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantum well under a metal electrode. The Euler and Poisson equations are used for studying the electron subsystem. Interaction between electrons and polar optical phonons are taken into consideration using a frequency dependence of the dielectric permittivity. As a result, the dispersion equations that describe self-consistent collective oscillations of plasmons and optical phonons are deduced. We found that interaction between electrons and optical phonons leads to instability of the electron subsystem. The considered physical systems are capable to be used as a generator or amplifier of the electromagnetic radiation in the 10 THz frequency range. The effect of instability is suppressed if damping of optical phonons and plasma oscillations is essentially strong.
The author is grateful to Prof. V.O. Kochelap for valuable suggestions and constant attention to this work.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
High-frequency properties of systems with drifting electrons and polar optical phonons
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title High-frequency properties of systems with drifting electrons and polar optical phonons
spellingShingle High-frequency properties of systems with drifting electrons and polar optical phonons
Kukhtaruk, S.M.
title_short High-frequency properties of systems with drifting electrons and polar optical phonons
title_full High-frequency properties of systems with drifting electrons and polar optical phonons
title_fullStr High-frequency properties of systems with drifting electrons and polar optical phonons
title_full_unstemmed High-frequency properties of systems with drifting electrons and polar optical phonons
title_sort high-frequency properties of systems with drifting electrons and polar optical phonons
author Kukhtaruk, S.M.
author_facet Kukhtaruk, S.M.
publishDate 2008
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantum well under a metal electrode. The Euler and Poisson equations are used for studying the electron subsystem. Interaction between electrons and polar optical phonons are taken into consideration using a frequency dependence of the dielectric permittivity. As a result, the dispersion equations that describe self-consistent collective oscillations of plasmons and optical phonons are deduced. We found that interaction between electrons and optical phonons leads to instability of the electron subsystem. The considered physical systems are capable to be used as a generator or amplifier of the electromagnetic radiation in the 10 THz frequency range. The effect of instability is suppressed if damping of optical phonons and plasma oscillations is essentially strong.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/118668
fulltext
citation_txt High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ.
work_keys_str_mv AT kukhtaruksm highfrequencypropertiesofsystemswithdriftingelectronsandpolaropticalphonons
first_indexed 2025-11-24T09:08:53Z
last_indexed 2025-11-24T09:08:53Z
_version_ 1850844498848907264