High-frequency properties of systems with drifting electrons and polar optical phonons
An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantu...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2008 |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/118668 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Kukhtaruk, S.M. 2017-05-30T19:15:00Z 2017-05-30T19:15:00Z 2008 High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 71.38.-k https://nasplib.isofts.kiev.ua/handle/123456789/118668 An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantum well under a metal electrode. The Euler and Poisson equations are used for studying the electron subsystem. Interaction between electrons and polar optical phonons are taken into consideration using a frequency dependence of the dielectric permittivity. As a result, the dispersion equations that describe self-consistent collective oscillations of plasmons and optical phonons are deduced. We found that interaction between electrons and optical phonons leads to instability of the electron subsystem. The considered physical systems are capable to be used as a generator or amplifier of the electromagnetic radiation in the 10 THz frequency range. The effect of instability is suppressed if damping of optical phonons and plasma oscillations is essentially strong. The author is grateful to Prof. V.O. Kochelap for valuable suggestions and constant attention to this work. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics High-frequency properties of systems with drifting electrons and polar optical phonons Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| spellingShingle |
High-frequency properties of systems with drifting electrons and polar optical phonons Kukhtaruk, S.M. |
| title_short |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_full |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_fullStr |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_full_unstemmed |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_sort |
high-frequency properties of systems with drifting electrons and polar optical phonons |
| author |
Kukhtaruk, S.M. |
| author_facet |
Kukhtaruk, S.M. |
| publishDate |
2008 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
An analysis of interaction between drifting electrons and optical phonons in
semiconductors is presented. Three physical systems are studied: three-dimensional
electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a
quantum well, and two-dimensional electron gas in a quantum well under a metal
electrode. The Euler and Poisson equations are used for studying the electron subsystem.
Interaction between electrons and polar optical phonons are taken into consideration
using a frequency dependence of the dielectric permittivity. As a result, the dispersion
equations that describe self-consistent collective oscillations of plasmons and optical
phonons are deduced. We found that interaction between electrons and optical phonons
leads to instability of the electron subsystem. The considered physical systems are
capable to be used as a generator or amplifier of the electromagnetic radiation in the 10
THz frequency range. The effect of instability is suppressed if damping of optical
phonons and plasma oscillations is essentially strong.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118668 |
| fulltext |
|
| citation_txt |
High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ. |
| work_keys_str_mv |
AT kukhtaruksm highfrequencypropertiesofsystemswithdriftingelectronsandpolaropticalphonons |
| first_indexed |
2025-11-24T09:08:53Z |
| last_indexed |
2025-11-24T09:08:53Z |
| _version_ |
1850844498848907264 |