High-frequency properties of systems with drifting electrons and polar optical phonons

An analysis of interaction between drifting electrons and optical phonons in
 semiconductors is presented. Three physical systems are studied: three-dimensional
 electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a
 quantum well, and two-dimensional...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2008
Автор: Kukhtaruk, S.M.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118668
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Цитувати:High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Kukhtaruk, S.M.
author_facet Kukhtaruk, S.M.
citation_txt High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description An analysis of interaction between drifting electrons and optical phonons in
 semiconductors is presented. Three physical systems are studied: three-dimensional
 electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a
 quantum well, and two-dimensional electron gas in a quantum well under a metal
 electrode. The Euler and Poisson equations are used for studying the electron subsystem.
 Interaction between electrons and polar optical phonons are taken into consideration
 using a frequency dependence of the dielectric permittivity. As a result, the dispersion
 equations that describe self-consistent collective oscillations of plasmons and optical
 phonons are deduced. We found that interaction between electrons and optical phonons
 leads to instability of the electron subsystem. The considered physical systems are
 capable to be used as a generator or amplifier of the electromagnetic radiation in the 10
 THz frequency range. The effect of instability is suppressed if damping of optical
 phonons and plasma oscillations is essentially strong.
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language English
last_indexed 2025-11-24T09:08:53Z
publishDate 2008
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Kukhtaruk, S.M.
2017-05-30T19:15:00Z
2017-05-30T19:15:00Z
2008
High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ.
1560-8034
PACS 71.38.-k
https://nasplib.isofts.kiev.ua/handle/123456789/118668
An analysis of interaction between drifting electrons and optical phonons in
 semiconductors is presented. Three physical systems are studied: three-dimensional
 electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a
 quantum well, and two-dimensional electron gas in a quantum well under a metal
 electrode. The Euler and Poisson equations are used for studying the electron subsystem.
 Interaction between electrons and polar optical phonons are taken into consideration
 using a frequency dependence of the dielectric permittivity. As a result, the dispersion
 equations that describe self-consistent collective oscillations of plasmons and optical
 phonons are deduced. We found that interaction between electrons and optical phonons
 leads to instability of the electron subsystem. The considered physical systems are
 capable to be used as a generator or amplifier of the electromagnetic radiation in the 10
 THz frequency range. The effect of instability is suppressed if damping of optical
 phonons and plasma oscillations is essentially strong.
The author is grateful to Prof. V.O. Kochelap for
 valuable suggestions and constant attention to this work.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
High-frequency properties of systems with drifting electrons and polar optical phonons
Article
published earlier
spellingShingle High-frequency properties of systems with drifting electrons and polar optical phonons
Kukhtaruk, S.M.
title High-frequency properties of systems with drifting electrons and polar optical phonons
title_full High-frequency properties of systems with drifting electrons and polar optical phonons
title_fullStr High-frequency properties of systems with drifting electrons and polar optical phonons
title_full_unstemmed High-frequency properties of systems with drifting electrons and polar optical phonons
title_short High-frequency properties of systems with drifting electrons and polar optical phonons
title_sort high-frequency properties of systems with drifting electrons and polar optical phonons
url https://nasplib.isofts.kiev.ua/handle/123456789/118668
work_keys_str_mv AT kukhtaruksm highfrequencypropertiesofsystemswithdriftingelectronsandpolaropticalphonons